Three-dimensional array device having a metal containing barrier and method of making thereof

ABSTRACT

A three-dimensional memory device includes driver transistors containing boron doped semiconductor active regions, device contact via structures in physical contact with the boron doped semiconductor active regions, the device contact via structures containing at least one of tantalum, tungsten, and cobalt, and a three-dimensional memory array located over the driver transistors and including an alternating stack of insulating layers and electrically conductive layers and memory structures vertically extending through the alternating stack.

RELATED APPLICATIONS

The present application claims the benefit of priority from U.S. Provisional Application Ser. No. 62/426,735 filed on Nov. 28, 2016, the entire content of which is incorporated herein by reference.

FIELD

The present disclosure relates generally to the field of semiconductor devices and specifically to three-dimensional non-volatile memory devices, such as vertical NAND strings and other three-dimensional devices, and methods of making the same.

BACKGROUND

Recently, ultra high density storage devices have been proposed using a three-dimensional (3D) stacked memory stack structure sometimes referred to as Bit Cost Scalable (BiCS) architecture. For example, a 3D NAND stacked memory device can be formed from an array of an alternating stack of insulating materials and spacer material layers that are formed as electrically conductive layer or replaced with electrically conductive layers. Memory openings are formed through the alternating stack, and are filled with memory stack structures, each of which includes a vertical stack of memory elements and a vertical semiconductor channel. A memory-level assembly including the alternating stack and the memory stack structures is formed over a substrate. The electrically conductive layers can function as word lines of a 3D NAND stacked memory device, and bit lines overlying an array of memory stack structures can be connected to drain-side ends of the vertical semiconductor channels. As three-dimensional memory devices scale to smaller device dimensions, the device area for peripheral devices can take up a significant portion of the total chip area.

SUMMARY

According to an aspect of the present disclosure, a three-dimensional memory device includes driver transistors containing boron doped semiconductor active regions, device contact via structures in physical contact with the boron doped semiconductor active regions, the device contact via structures containing at least one of tantalum, titanium, tungsten, and cobalt, and a three-dimensional memory array located over the driver transistors and including an alternating stack of insulating layers and electrically conductive layers and memory structures vertically extending through the alternating stack.

According to another aspect of the present disclosure, a method of forming a three-dimensional memory device comprises forming driver transistors containing boron doped semiconductor active regions, forming device contact via structures in physical contact with the boron doped semiconductor active regions, the device contact via structures containing at least one of tantalum and cobalt, and forming a three-dimensional memory array located over the driver transistors and comprising an alternating stack of insulating layers and electrically conductive layers and memory structures vertically extending through the alternating stack.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a vertical cross-sectional view of an exemplary structure after formation of semiconductor devices, at least one lower level dielectric layer, and lower level metal interconnect structures on a semiconductor substrate according to a first embodiment of the present disclosure.

FIG. 2A-2D are sequential vertical cross-sectional view of a region of the exemplary structure during formation of a metal semiconductor alloy portion and a via cavity according to an embodiment of the present disclosure.

FIGS. 3A-3D are vertical cross-sectional view of various configurations of a contact via structure within the region of the exemplary structure after according to an embodiment of the present disclosure.

FIG. 4 shows Gibbs free energy change during formation of metal-boron compounds.

FIG. 5 is a vertical cross-sectional view of the exemplary structure after formation of a planar semiconductor material layer and a first-tier alternating stack of first insulting layers and first spacer material layers according to an embodiment of the present disclosure.

FIG. 6 is a vertical cross-sectional view of the exemplary structure after patterning first-tier staircase regions on the first-tier alternating stack and forming a first-tier retro-stepped dielectric material portion according to an embodiment of the present disclosure.

FIG. 7A is a vertical cross-sectional view of the exemplary structure after formation of first-tier memory openings and first tier support openings according to an embodiment of the present disclosure.

FIG. 7B is a horizontal cross-sectional view of the exemplary structure along the horizontal plane B-B′ in FIG. 7A. The zig-zag vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 7A.

FIG. 8 is a vertical cross-sectional view of the exemplary structure after formation of sacrificial memory opening fill portions and sacrificial support opening fill portions according to an embodiment of the present disclosure.

FIG. 9 is a vertical cross-sectional view of the exemplary structure after formation of a second-tier alternating stack of second insulating layers and second spacer material layers, a second-tier retro-stepped dielectric material portion, and a second insulating cap layer according to an embodiment of the present disclosure.

FIG. 10A is a vertical cross-sectional view of the exemplary structure after formation of inter-tier memory openings and inter-tier support openings according to an embodiment of the present disclosure.

FIG. 10B is a horizontal cross-sectional view of the exemplary structure along the horizontal plane B-B′ in FIG. 10A. The zig-zag vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 10A.

FIG. 11 is a vertical cross-sectional view of the exemplary structure after formation of memory stack structures according to an embodiment of the present disclosure.

FIGS. 12A-12H are sequential vertical cross-sectional views of an inter-tier memory opening during formation of a pillar channel portion, a memory stack structure, a dielectric core, and a drain region according to an embodiment of the present disclosure.

FIG. 13A is a vertical cross-sectional view of the exemplary structure after formation of a contact level dielectric layer backside contact trenches according to an embodiment of the present disclosure.

FIG. 13B is a horizontal cross-sectional view of the exemplary structure along the horizontal plane B-B′ in FIG. 13A. The zig-zag vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 13A.

FIG. 14 is a vertical cross-sectional view of the exemplary structure after replacement of sacrificial material layers with electrically conductive layers and formation of insulating spacers, backside contact via structures, drain contact via structures, and source bias line structures according to an embodiment of the present disclosure.

FIG. 15A is a vertical cross-sectional view of the exemplary structure after formation of through-memory-level via structures and word line contact via structures according to an embodiment of the present disclosure.

FIG. 15B is a horizontal cross-sectional view of the exemplary structure along the horizontal plane B-B′ in FIG. 15A. The zig-zag vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 15A.

FIG. 16 is a vertical cross-sectional view of the exemplary structure after formation of upper level line structures according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

As discussed above, the present disclosure is directed to three-dimensional non-volatile memory devices, such as vertical NAND strings and other three-dimensional devices, and methods of making the same, the various aspects of which are described below. The embodiments of the disclosure can be employed to form various semiconductor devices such as three-dimensional monolithic memory array devices comprising a plurality of NAND memory strings. The drawings are not drawn to scale. Multiple instances of an element may be duplicated where a single instance of the element is illustrated, unless absence of duplication of elements is expressly described or clearly indicated otherwise.

Ordinals such as “first,” “second,” and “third” are employed merely to identify similar elements, and different ordinals may be employed across the specification and the claims of the instant disclosure. As used herein, a first element located “on” a second element can be located on the exterior side of a surface of the second element or on the interior side of the second element. As used herein, a first element is located “directly on” a second element if there exist a physical contact between a surface of the first element and a surface of the second element. As used herein, an “in-process” structure or a “transient” structure refers to a structure that is subsequently modified.

As used herein, a “layer” refers to a material portion including a region having a thickness. A layer may extend over the entirety of an underlying or overlying structure, or may have an extent less than the extent of an underlying or overlying structure. Further, a layer may be a region of a homogeneous or inhomogeneous continuous structure that has a thickness less than the thickness of the continuous structure. For example, a layer may be located between any pair of horizontal planes between or at a top surface and a bottom surface of the continuous structure. A layer may extend horizontally, vertically, and/or along a tapered surface. A substrate may be a layer, may include one or more layers therein, and/or may have one or more layer thereupon, thereabove, and/or therebelow.

As used herein, a “memory level” or a “memory array level” refers to the level corresponding to a general region between a first horizontal plane (i.e., a plane parallel to the top surface of the substrate) including topmost surfaces of an array of memory elements and a second horizontal plane including bottommost surfaces of the array of memory elements. As used herein, a “through-memory-level” element refers to an element that vertically extends through a memory level.

As used herein, a “semiconductor material” refers to a material having electrical conductivity in the range from 1.0×10⁻⁶ S/cm to 1.0×10⁵ S/cm, and is capable of producing a doped material having electrical conductivity in a range from 1.0 S/cm to 1.0×10⁵ S/cm upon suitable doping with an electrical dopant. As used herein, an “electrical dopant” refers to a p-type dopant that adds a hole to a valence band within a band structure, or an n-type dopant that adds an electron to a conduction band within a band structure. As used herein, a “conductive material” refers to a material having electrical conductivity greater than 1.0×10⁵ S/cm. As used herein, an “insulating material” or a “dielectric material” refers to a material having electrical conductivity less than 1.0×10⁻⁶ S/cm. All measurements for electrical conductivities are made at the standard condition.

A monolithic three dimensional memory array is one in which multiple memory levels are formed above a single substrate, such as a semiconductor wafer, with no intervening substrates. The term “monolithic” means that layers of each level of the array are directly deposited on the layers of each underlying level of the array. In contrast, two dimensional arrays may be formed separately and then packaged together to form a non-monolithic memory device. For example, non-monolithic stacked memories have been constructed by forming memory levels on separate substrates and vertically stacking the memory levels, as described in U.S. Pat. No. 5,915,167 titled “Three Dimensional Structure Memory.” The substrates may be thinned or removed from the memory levels before bonding, but as the memory levels are initially formed over separate substrates, such memories are not true monolithic three dimensional memory arrays. The substrate may include integrated circuits fabricated thereon, such as driver circuits for a memory device

The various three dimensional memory devices of the present disclosure include a monolithic three-dimensional NAND string memory device, and can be fabricated employing the various embodiments described herein. The monolithic three dimensional NAND string is located in a monolithic, three dimensional array of NAND strings located over the substrate. At least one memory cell in the first device level of the three dimensional array of NAND strings is located over another memory cell in the second device level of the three dimensional array of NAND strings.

Referring to FIG. 1, an exemplary structure according to a first embodiment of the present disclosure is illustrated. The exemplary structure includes a semiconductor substrate 8, and semiconductor devices 710 formed thereupon. The semiconductor substrate 8 includes a substrate semiconductor layer 9 at least at an upper portion thereof. Shallow trench isolation structures 720 can be formed in an upper portion of the substrate semiconductor layer 9 to provide electrical isolation among the semiconductor devices. The semiconductor devices 710 can include, for example, field effect transistors including respective transistor active regions 742 (i.e., source regions and drain regions), channel regions 746 and gate structures 750. The field effect transistors may be arranged in a CMOS configuration. Each gate structure 750 can include, for example, a gate dielectric 752, a gate electrode 754, a dielectric gate spacer 756 and a gate cap dielectric 758. The semiconductor devices 710 can include any semiconductor circuitry to support operation of a memory structure to be subsequently formed, which is typically referred to as a driver circuitry, which is also known as peripheral circuitry. As used herein, a peripheral circuitry refers to any, each, or all, of word line decoder circuitry, word line switching circuitry, bit line decoder circuitry, bit line sensing and/or switching circuitry, power supply/distribution circuitry, data buffer and/or latch, or any other semiconductor circuitry that can be implemented outside a memory array structure for a memory device. For example, the semiconductor devices 710 can include driver transistors arranged in a CMOS configuration which can function as word line switching devices for electrically biasing word lines of three-dimensional memory structures to be subsequently formed.

The semiconductor substrate 8 maybe a semiconductor wafer or a semiconductor material layer, and can include at least one elemental semiconductor material (e.g., single crystal silicon wafer or layer), at least one III-V compound semiconductor material, at least one II-VI compound semiconductor material, at least one organic semiconductor material, or other semiconductor materials known in the art. The semiconductor substrate 8 can have a major surface 7, which can be, for example, a topmost surface of the substrate semiconductor layer 9. The major surface 7 can be a semiconductor surface. In one embodiment, the major surface 7 can be a single crystalline semiconductor surface, such as a single crystalline semiconductor surface. In one embodiment, the semiconductor substrate 8 includes single crystalline silicon. In one embodiment, the substrate semiconductor layer 9 can be doped with electrical dopants, which may be p-type dopants or n-type dopants. The conductivity type of the doping of the substrate semiconductor layer 9 is herein referred to as a first conductivity type. The dopant concentration in the substrate semiconductor layer 9 can be in a range from 1.0×10¹⁴/cm³ to 1.0×10¹⁷/cm³, although lesser and greater dopant concentrations can also be employed. The substrate semiconductor layer 9 can be formed as a doped well implanted into the semiconductor substrate 8 or as a thin film deposited on the major surface 7 of the semiconductor substrate 8.

At least one dielectric layer is formed over the semiconductor devices, which is herein referred to as at least one lower level dielectric layer 760. The at least one lower level dielectric layer 760 can include, for example, a dielectric liner 762 such as a silicon nitride liner that blocks diffusion of mobile ions and/or apply appropriate stress to underlying structures, a planarization dielectric layer 764 that is employed to provide a planar surface that is coplanar with the topmost surface of the dielectric liner 762 or the topmost surfaces of the gate structures 750, an optional planar liner 766, and at least one lower level interconnect dielectric layer 768 that collectively functions as a matrix for lower level metal interconnect structures 780 that provide electrical wiring among the various nodes of the semiconductor devices and landing pads for through-memory-level via structures to be subsequently formed. The lower level metal interconnect structures 780 can include various device contact via structures 782 (e.g., source and drain electrodes which contact the respective source and drain nodes of the device or gate electrode contacts), lower level metal lines 784, lower level via structures 786, and lower level topmost metal structures 788 that are configured to function as landing pads for through-memory-level via structures to be subsequently formed. The region of the semiconductor devices and the combination of the at least one lower level dielectric layer 760 and the lower level metal interconnect structures 780 is herein referred to an underlying peripheral device region 700, which is located underneath a memory-level assembly to be subsequently formed and includes peripheral devices for the memory-level assembly. The lower level metal interconnect structures 780 are embedded in the at least one lower level dielectric layer 760. In one embodiment, the topmost surfaces of the lower level topmost metal structures 788 may be located at or below a horizontal plane including the topmost surface of the at least one lower level dielectric layer 760.

The lower level metal interconnect structures 780 can be electrically shorted to active nodes (e.g., transistor active regions 742 or gate electrodes 750) of the semiconductor devices 710 (e.g., CMOS devices), and are located at the level of the at least one lower level dielectric layer 760. Only a subset of the active nodes is illustrated in FIG. 1 for clarity. Through-memory-level via structures (not shown in FIG. 1) can be subsequently formed directly on the lower level metal interconnect structures 780 to provide electrical connection to memory devices to be subsequently formed. In one embodiment, the pattern of the lower level metal interconnect structures 780 can be selected such that the lower level topmost metal structures 788 (which are a subset of the lower level metal interconnect structures 780 located at the topmost portion of the lower level metal interconnect structures 780) can provide landing pad structures for the through-memory-level via structures to be subsequently formed.

Referring to FIG. 2A, a region of the exemplary structure in which a first exemplary device contact via structure 782 will be formed is illustrated during a manufacturing process. The first exemplary device contact via structure 782 can be formed on a transistor active region 742 (which may be a source region or a drain region). As used herein, source regions and the drain regions for field effect transistors are collectively referred to as transistor active regions 742. Thus, a transistor active region 742 may be a source region or a drain region. It is understood that many field effect transistors can be operated in a first configuration in which a first one of the transistor active regions 742 is a source region and a second one of the transistor active regions 742 is a drain region, and in a second configuration in which the first one of the transistor active regions 742 is a drain region and the second one of the transistor active regions 742 is a source region depending on electrical bias voltages. Each transistor has a gate electrode 754 that can control electrical current through the respective transistor active region 742 and contacts a portion of a respective gate dielectric 752.

The shallow trench isolation structures 720 can be formed by patterning shallow trenches on the top surface of the substrate semiconductor layer 9, and by filling the shallow trenches 720 with a dielectric material such as silicon oxide. A gate level layer stack including a gate dielectric layer, at least one gate conductor layer, and a gate cap dielectric layer is deposited over the top surface of the substrate semiconductor layer 9. A photoresist layer is applied over the gate level layer stack, and is lithographically patterned to cover areas in which gate electrodes 754 are to be subsequently formed. An anisotropic etch is performed to pattern the gate level layer stack including the patterned photoresist layer as an etch mask. Each patterned portion of the gate dielectric layer can be a gate dielectric 752, each patterned portion of the gate electrode layer can be a gate electrode 754, and each patterned portion of the gate cap dielectric layer can be a gate cap dielectric 758.

Source extension regions and drain extension regions (e.g., LDD regions), which are subsequently incorporated into transistor active regions 742 and not separately shown in FIG. 2A, can be formed by implantation of ions of the opposite conductivity type than the conductivity type of the substrate semiconductor layer 9. The conductivity type of the dopants implanted to form the source extension regions and the drain extension regions is herein referred to as a second conductivity type. For example, if the first conductivity type is p-type, the second conductivity type is n-type, and vice versa. A dielectric gate spacer 756 can be formed around each patterned gate stack (752, 754, 758) by conformal formation of at least one dielectric spacer layer and at least one anisotropic etch. Conformal deposition of a dielectric material and/or thermal or plasma conversion of semiconductor materials into a dielectric material can be employed to form all, or a component, of the at least one dielectric spacer layer. Each contiguous set of a patterned gate stack (752, 754, 758) and a dielectric gate spacer 756 is collectively referred to as a gate structure 750.

Additional dopants of the second conductivity type can be implanted into upper portions of the substrate semiconductor layer 9 that are not covered by the gate structures 750. Dopants that can be implanted into the unmasked portions of the substrate semiconductor layer 9 include p-type dopants such as boron, and n-type dopants such as phosphorus, arsenic, or antimony. Implanted upper portions of the substrate semiconductor layer 9 are converted into transistor active regions 742, each of which may be a source region or a drain region depending on the mode of operation of a respective field effect transistor.

Each transistor active region 742 is a doped semiconductor material portion embedded in the remaining portion of the substrate semiconductor layer 9. The transistor active regions 742 are doped semiconductor material portions having a doping of a respective conductivity type. At least of a subset of the transistor active region 742 includes a doped semiconductor material including electrical dopants of the second conductivity type. In one embodiment, the second conductivity type can be p-type and the electrical dopants in the transistor active regions 742 can be boron atoms. In this case, the subset of the transistor active regions 742 includes a boron-doped silicon-containing material such as boron-doped silicon. The dopant concentration in the transistor active regions 742 can be in a range from 1.0×10¹⁸/cm³ to 2.0×10²¹/cm³, such as from 5.0×10¹⁹/cm³ to 1.0×10²¹/cm³, although lesser and greater dopant concentrations can also be employed. The thickness of the transistor active regions 742 may range from 30 nm to 600 nm, although lesser and greater thicknesses can also be employed.

A dielectric liner 762 can be deposited on the gate structures 750, the transistor active regions 742, and the shallow trench isolation structures 720. The dielectric liner 762 includes a dielectric material such as silicon nitride, silicon oxide, or a dielectric metal oxide. In one embodiment, the dielectric liner 762 can include a diffusion barrier material such as silicon nitride. The dielectric liner 762 can be deposited by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, or atomic layer deposition. The thickness of the dielectric liner 762 can be in a range from 2 nm to 40 nm, although lesser and greater thicknesses can also be employed.

A photoresist layer (not shown) can be applied over the dielectric liner 762, and can be lithographically patterned to form openings in areas in which contact via structures are to be subsequently formed. The unmasked portions of the dielectric liner 762 can be etched by an isotropic etch process or an anisotropic etch process to form openings 763 in the dielectric liner 762. Top surfaces of the transistor active regions 742 are physically exposed within the areas of the opening in the photoresist layer. The photoresist layer can be subsequently removed, for example, by ashing.

Alternatively, the openings 763 can be formed at a later process step through more than one sub-layer of the lower level dielectric layer 760. For example, the planarization dielectric layer 764 can be first formed over the dielectric liner 762 and optionally the planar liner 766 can be then formed over the planarization dielectric layer 764, followed by forming the openings 763 through the planarization dielectric layer 764 and the dielectric liner 762 and optionally through the planar liner 766 of the lower level dielectric layer 760.

Referring to FIG. 2B, a metal layer 1702 is deposited on the physically exposed surfaces of the transistor active regions 742 and on the outer surfaces of the dielectric liner 762. The metal layer 1702 includes an elemental metal or an intermetallic alloy of at least two elemental metals that form a metal-semiconductor alloy with the semiconductor material of the substrate semiconductor layer 9, which is the same as the semiconductor material of the transistor active regions 742 except for differences in electrical (p-type or n-type) dopant species and electrical dopant concentration. For example, if the substrate semiconductor layer 9 includes silicon or a silicon-containing semiconductor material, the metal layer 1702 includes at least one elemental metal that forms a metal silicide upon reaction with silicon.

In an illustrated example, the metal layer 1702 can include tantalum, titanium cobalt or tungsten. In one embodiment, the metal layer 1702 can consist essentially of at least one metal selected from titanium, tantalum, cobalt, and tungsten. In one embodiment, the metal layer 1702 can consist essentially of an elemental metal (such as titanium, tantalum, cobalt, or tungsten), an intermetallic alloy of at least two of titanium, tantalum, cobalt, and tungsten, or a combination of an elemental metal portion and an intermetallic alloy portion. The metal layer 1702 is deposited directly on the doped semiconductor material of the transistor active regions 742. The metal layer 1702 can be deposited by a directional or non-directional deposition method. In one embodiment, the metal layer 1702 can be deposited by physical vapor deposition or chemical vapor deposition. The thickness of the metal layer 1702 can be selected such that sufficient amount of at least one elemental metal for forming a metal-semiconductor alloy material of a target thickness is provided by the metal layer 1702. For example, the thickness of the metal layer 1702 can be in a range from 5 nm to 50 nm, although lesser and greater thicknesses can also be employed.

Referring to FIG. 2C, the exemplary structure is annealed at an elevated temperature to induce reaction between the semiconductor material of the transistor active regions 742 and the material of the metal layer 1702. The temperature of the anneal is dependent on the material of the metal layer 1702 and the semiconductor material of the transistor active regions 742. In case the transistor active regions 742 include silicon and the metal layer 1702 consists essentially of cobalt, a two-step anneal process can be employed in which the first anneal temperature can be in a range from 400 degrees Celsius to 600 degrees Celsius, and the second anneal temperature can be in a range from 600 degrees Celsius to 800 degrees Celsius, although lower and higher temperatures can also be employed. In case the transistor active regions 742 include silicon and the metal layer 1702 consists essentially of tantalum, the temperature of the anneal process can be in a range from 550 degrees Celsius to 750 degrees Celsius, although lower and higher temperatures can also be employed. In case the transistor active regions 742 include silicon and the metal layer 1702 consists essentially of titanium, the temperature of the anneal process can be in a range from 600 degrees Celsius to 800 degrees Celsius, although lower and higher temperatures can also be employed. In case the transistor active regions 742 include silicon and the metal layer 1702 consists essentially of an alloy of at least two elements selected from titanium, tantalum, and cobalt, the temperature of the anneal process can be selected based on the composition of the metal layer 1702. Generally, the number of steps and the anneal temperature can be optimized to lower the resistivity of the metal-semiconductor alloy material formed by the reaction.

A metal-semiconductor alloy portion 744 (e.g., tantalum silicide, titanium silicide, cobalt silicide, tungsten silicide or tantalum cobalt silicide) of the device via contact structure 782 is formed by reaction of a surface portion of each transistor active region 742 that contacts the metal layer 1702. Each portion of the metal layer 1702 that contacts an underlying semiconductor material portion of a respective transistor active region 742 is consumed to form a metal-semiconductor alloy material of the metal-semiconductor alloy portions 744. Unreacted portions of the metal layer 1702 is removed by an etch process that removes the elemental metal or the intermetallic alloy of the metal layer 1702 selective to the metal-semiconductor alloy of the metal-semiconductor alloy portions 744. For example, a selective wet etch process can be employed to etch the metal of the metal layer 1702 selective to the metal-semiconductor alloy material.

According to an aspect of the present disclosure, the metal layer 1702 can include tantalum, titanium, cobalt or tungsten. In this case, upon reaction of a portion of the doped semiconductor material portion (i.e., the transistor active regions 742) with a metal portion of the metal layer 1702 to form the metal-semiconductor alloy portion 744, wherein tantalum, titanium, cobalt or tungsten is present within the metal-semiconductor alloy portion.

In an alternative embodiment, the metal layer 1702 includes a titanium layer or a stack of multiple layers including, from bottom to top, a titanium layer and a titanium nitride layer or a titanium carbide layer, the metal-semiconductor alloy portion 744 can include a titanium silicide material. Optionally, the metal-semiconductor alloy portion 744 can include a nitrogen or carbon concentration gradient if titanium nitride or titanium carbide are present respectively. In this case, the atomic percentage of nitrogen or carbon can decrease with vertical distance from the top surface of the metal-semiconductor alloy portion 744 (which can be a nitrogen-doped titanium silicide portion). In one embodiment the nitrogen or carbon concentration gradient can be present in the metal-semiconductor alloy portion 744 even after all activation anneal processes, i.e., in the final semiconductor device. This alternative embodiment is compatible with all configurations and/or embodiments that allows use of titanium silicide or other metal silicides in the metal-semiconductor alloy portion 744.

Referring to FIG. 2D, the planarization dielectric layer 764 can be formed over the dielectric liner 762 and the metal-semiconductor alloy portions 744. The planarization dielectric layer 764 includes a dielectric material that can be planarized, for example, by chemical mechanical planarization. For example, the planarization dielectric layer 764 can include undoped silicate glass (i.e., silicon oxide), borosilicate glass (BSG), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorosilicate glass (FSG), or a combination thereof. A planar top surface is provided on the planarization dielectric layer 764 after the planarization process. Optionally, the planar liner 766 can be formed over the planarization dielectric layer 764 at this time.

A photoresist layer (not shown) can be applied over the top surface of the planarization dielectric layer, and can be lithographically patterned to form openings in areas in which contact via cavities 1709 are to be subsequently formed. An anisotropic etch can be performed to transfer the pattern of the photoresist layer through the planarization dielectric layer 764. A top surface of a respective metal-semiconductor alloy portion 744 can be physically exposed at the bottom of each contact via cavity 1709. The photoresist layer can be removed, for example, by ashing. In the alternative embodiment, the metal-semiconductor alloy portions 744 can be formed at this time through the contact via cavities 1709 by depositing the metal layer 1702 into the contact via cavities 1709 in contact with the exposed transistor active regions 742 followed by the annealing to form the alloy (e.g., silicide) portions 744 and selective etching of the unreacted portions of the metal layer 1702 as described above. In another alternative embodiment, the metal-semiconductor alloy portions 744 can be omitted entirely if the cobalt, tantalum, titanium, and/or tungsten is present in other layers of the device contact via structure 782.

Referring to FIGS. 3A-3D, additional layers of the device contact via structure 782 can be formed within each contact via cavity 1709 by deposition of electrically conductive metallic materials in the contact via cavities 1709. FIGS. 3A-3D illustrate first, second, third, and fourth configurations for the device contact via structure, respectively. After deposition of the metallic materials, excess portions of the metallic materials are subsequently removed from above a horizontal plane including the top surface of the planarization dielectric layer by a planarization process. The planarization process can include chemical mechanical planarization and/or a recess etch. Each contiguous set of remaining metallic materials constitute a device contact via structure 782.

Each device contact via structure 782 can include at least one metallic material layer 1730 and a conductive fill material portion 1740 and optionally the metal-semiconductor alloy portion 744 described above. The at least one metallic material layer 1730 can include (and/or consist essentially of) a metallic nitride barrier layer 1736 as in the first configuration illustrated in FIG. 3A. Alternatively, the at least one metallic material layer 1730 can include (and/or consist essentially of) a stack of an elemental metal layer 1734 and the metallic nitride barrier layer 1736 as in the second configuration illustrated in FIG. 3B. Alternatively, the at least one metallic material layer 1730 can include (and/or consist essentially of) a stack of a first metallic nitride barrier layer 1732 and the metallic nitride barrier layer 1736 (which is referred to as a second metallic nitride barrier layer in this case) as in a third configuration illustrated in FIG. 3C. Alternatively, the at least one metallic material layer 1730 can include (and/or consist essentially of) a stack of a first metallic nitride barrier layer 1732, an elemental metal layer 1734, and the metallic nitride barrier layer 1736 (which is referred to as a second metallic nitride barrier layer in this case) as in a third configuration illustrated in FIG. 3D. Alternatively, the at least one metallic barrier layer 1732, 1736 can include a metallic carbide layer or an metal alloy containing both carbon and nitrogen. The conductive fill material portion 1740 can include any electrically conductive metal or metal alloy, such as tungsten, titanium, aluminum, copper, their alloys, etc.

The device contact via structures 782 can be formed in electrical and/or in physical contact with the respective underlying doped semiconductor material of the transistor active region 742. Each device contact via structure 782 can include a metallic nitride barrier layer 1736, a conductive fill material portion 1740, and optionally the metal-semiconductor alloy portion 744 described above. According to an aspect of the present disclosure, tantalum, titanium, tungsten or cobalt is present within the metal-semiconductor alloy portion 744 (e.g., as tantalum silicide or cobalt silicide), within the metallic nitride barrier layer 1736 (e.g., as tantalum nitride), and/or between the metal-semiconductor alloy portion 744 and the metallic nitride barrier layer 1736 (e.g., as tantalum or cobalt metal layer). In one embodiment, the doped semiconductor material of at least some of the transistor active regions 742 includes a boron-doped silicon-containing material. For example, if the transistors are arranged in a CMOS configuration, then the one of the two transistors of each CMOS device will have boron doped source and drain active regions 742.

Referring to FIG. 4, Gibbs free energy change during formation of metal-boron compounds is illustrated. In the traditional contact metal stack including a titanium silicide portion, a titanium nitride portion, and a tungsten portion, boron atoms can easily diffuse through the titanium silicide portion. At the interface between titanium silicide and titanium nitride, the boron atoms forms titanium diboride (TiB₂) because this reaction provides a negative change in the Gibbs free energy. The boron atoms can diffuse in the form of titanium diboride through the titanium nitride portion and into the tungsten portion during a high temperature processing step, thereby resulting in the loss of boron atoms from the boron-doped semiconductor material of the transistor active regions 742.

The inventors of the present disclosure recognized that tungsten, cobalt and tantalum do not easily form a compound with boron. Specifically, formation of a cobalt-boron compound (such as CoB) or a tantalum-boron compound (such as Ta₃B₄) or a tungsten-boron compound (such as W₂B₅) provides a positive change or a near-zero change in the Gibbs free energy. Thus, diffusion of boron through cobalt, tantalum, tungsten, cobalt silicide, tantalum silicide or tungsten silicide at an elevated temperature is much less than diffusion of boron through materials, such as titanium or titanium silicide, that easily allow formation of a metal-boron compound.

Referring back to FIG. 3A, tantalum, tungsten and/or cobalt is provided within the metal-semiconductor alloy portion 744 (e.g., as tantalum silicide, cobalt silicide or tantalum cobalt silicide) in the first configuration for the device contact via structure 782. In this case, the metal layer 1702 comprises tantalum, tungsten, cobalt, or an alloy thereof, which is deposited directly on the doped semiconductor material of the transistor active regions 742 at the processing steps of FIG. 2B. A portion of the doped semiconductor material is reacted with the contacting portion of the metal layer 1702 to form the metal-semiconductor alloy portion 744, such as tantalum silicide, cobalt silicide, tungsten silicide, tantalum cobalt silicide, or a silicide of an alloy of tantalum, cobalt, tungsten, and/or titanium. In this case, tantalum, tungsten, tungsten, and/or cobalt can be present within the metal-semiconductor alloy portion 744.

In case the substrate semiconductor layer 9 includes silicon, the metal-semiconductor alloy portion 744 can include a silicide of a metal selected from cobalt, tantalum or tungsten. In case the substrate semiconductor layer 9 includes a silicon-germanium alloy, the metal-semiconductor alloy portion 744 can include a germanosilicide of a metal selected from cobalt, tantalum, or tungsten. In one embodiment, the metal-semiconductor alloy portion 744 can consist essentially of cobalt silicide or a cobalt germanosilicide. In another embodiment, the metal-semiconductor alloy portion 744 can consist essentially of tantalum silicide or a tantalum germanosilicide. In yet another embodiment, the metal-semiconductor alloy portion 744 can consist essentially of cobalt-tantalum silicide or a cobalt-tantalum germanosilicide.

The metallic nitride barrier layer 1736 can be deposited directly on the metal-semiconductor alloy portion 744 after the processing steps of FIG. 2D. The at least one metallic material layer 1730 can consist of the metallic nitride barrier layer 1736 in this case. The metallic nitride barrier layer 1736 can be deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD). In one embodiment, the metallic nitride barrier layer can include a material selected from tantalum nitride, titanium nitride and tungsten nitride. The thickness of the metallic nitride barrier layer 1736 can be in a range from 5 nm to 60 nm, such as from 10 nm to 30 nm, although lesser and greater thicknesses can also be employed. Diffusion of boron atoms can be stopped in the metal-semiconductor alloy portion 744 because cobalt silicide and tantalum silicide are not conducive to formation of cobalt-boron compounds, tantalum-boron compounds, or tungsten-boron compounds. A thin film stack including cobalt, tantalum, or tungsten is provided by the combination of the metal-semiconductor alloy portion 744 and the metallic nitride barrier layer 1736. Non-limiting exemplary the thin film stack in the first configuration include TaSi₂/TaN, TaSi₂/TiN, TaSi2/WN, CoSi₂/TaN, CoSi₂/TiN, TiSi2/WN, CoSi2/WN, WSi2/TaN, WSi2/TiN, WSi2/WN. Alternately, the barrier layer 1736 can comprise a carbide of tantalum, titanium and/or tungsten.

Referring to FIG. 3B, the at least one metallic material layer 1730 of a device contact via structure 782 can include a stack of an elemental metal layer 1734 and a metallic nitride barrier layer 1736 in the second configuration for the device contact via structure 782. In this case, tantalum, tungsten and/or cobalt can be provided within the metal-semiconductor alloy portion 744 and/or the elemental metal layer 1734. The metal-semiconductor alloy portion 744 may be formed in the same manner as in the first configuration of FIG. 3A to include tantalum, tungsten and/or cobalt therein, or may be formed in a manner that does not include tantalum, tungsten or cobalt. In this case, the metal layer 1702 includes another metal that forms a metal-semiconductor alloy through reaction with the semiconductor material of the substrate semiconductor layer 9. For example, the metal layer 1702 may include titanium, and/or nickel. In one embodiment, the metal layer 1702 includes, or consists essentially of, titanium. A portion of the doped semiconductor material of the transistor active regions 742 is reacted with the metal layer 1702 to form the metal-semiconductor alloy portion 744 at the processing steps of FIG. 2C. In the second configuration, tantalum, tungsten and/or cobalt may, or may not, be present within the metal-semiconductor alloy portion 744. Alternatively, the metal-semiconductor alloy portion 744 may be omitted in the second configuration.

The elemental metal layer 1734 can include, or consist essentially of, at least one elemental metal, i.e., a single elemental metal or a plurality of elemental metals. If the metal semiconductor alloy portion 744 includes tantalum and/or cobalt, the elemental metal layer 1734 may, or may not, include tantalum, tungsten, and/or cobalt. If the metal semiconductor alloy portion 744 does not include tantalum, tungsten, and/or cobalt, then the elemental metal layer 1734 includes tantalum, tungsten, and/or cobalt. In this case, the elemental metal layer 1734 may be a tantalum layer, a tungsten layer, a cobalt layer, or a layer of an alloy thereof. The elemental metal layer 1734 can be deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD). The thickness of the elemental metal layer 1734 can be in a range from 2 nm to 60 nm, such as from 5 nm to 20 nm, although lesser and greater thicknesses can also be employed.

If the metal semiconductor alloy portion 744 does not include tantalum, tungsten, and/or cobalt, at least one elemental metal selected from tantalum and cobalt is present within the elemental metal layer 1734 at an atomic concentration greater than 97%, and/or greater than 99%, and/or greater than 99.8% even after activation anneal that is performed in subsequent processes and may cause diffusion of dopant atoms into the elemental metal layer 1734. If the metal semiconductor alloy portion 744 includes tantalum, tungsten, and/or cobalt, at least one elemental metal selected from titanium, tantalum, cobalt, or tungsten is present within the elemental metal layer 1734 at an atomic concentration greater than 97%, and/or greater than 99%, and/or greater than 99.8% even after activation anneal that is performed in subsequent processes and may cause diffusion of dopant atoms into the elemental metal layer 1734.

Subsequently, a metallic nitride barrier layer 1736 can be deposited on the elemental metal layer 1734. The thickness of the metallic nitride barrier layer 1736 can be in a range from 5 nm to 60 nm, such as from 10 nm to 30 nm, although lesser and greater thicknesses can also be employed. The at least one metallic material layer 1730 can include a stack of the elemental metal layer 1734 and the metallic nitride barrier layer 1736 in this case. Diffusion of boron atoms can be stopped in a layer including cobalt, tungsten, and/or tantalum because they are not conducive to formation of cobalt-boron compounds or tantalum-boron compounds. The layer at which diffusion of boron is stopped may be the metal-semiconductor alloy portion 744 and/or the elemental metal layer 1734. Alternatively, the order of layers 1734 and 1736 may be reversed. Alternatively, the metallic barrier 1736 can comprise a metallic carbide layer.

A thin film stack including cobalt, tungsten, or tantalum is provided by the combination of the metal-semiconductor alloy portion 744, the elemental metal layer 1734, and the metallic nitride barrier layer 1736. Non-limiting exemplary thin film stacks in the second configuration include TaSi₂/Ta/TaN, TaSi₂/Co/TaN, TaSi₂/Ta/TiN, TaSi₂/Co/TiN, CoSi₂/Ta/TiN, CoSi₂/Co/TiN, CoSi₂/Ta/TiN, CoSi₂/Co/TiN, a metal silicide not including Ta or Co/Ta/TaN, a metal silicide not including Ta or Co/Co/TaN, a metal silicide not including Ta or Co/Ta/TiN, and a metal silicide not including Ta or Co/Co/TaN. Examples of metal silicides not including Ta or Co include titanium silicide, tungsten silicide, and nickel silicide. In one embodiment, the thin film stack can include TiSi₂/Co/TiN or CoSi₂/Ti/TiN.

Referring to FIG. 3C, a third configuration for the device contact via structure 782 is shown. The at least one metallic material layer 1730 of a device contact via structure 782 can include a stack of an additional metallic nitride barrier layer (which is herein referred to as a first metallic nitride barrier layer 1732) that is deposited directly on the metal semiconductor alloy portion 744, and a metallic nitride barrier layer 1736 (which is herein referred to as a second metallic nitride barrier layer 1736) that is deposited on the first metallic nitride barrier layer 1732. In this case, tantalum, tungsten, and/or cobalt can be provided within the second metallic nitride barrier layer 1736. Optionally, additional tantalum, tungsten, and/or cobalt can be provided in the metal-semiconductor alloy portion 744. In one embodiment, the second metallic nitride barrier layer 1736 can be a tantalum nitride layer.

The metal-semiconductor alloy portion 744 may be formed in the same manner as in the first configuration of FIG. 3A to include tantalum, tungsten, and/or cobalt therein, or may be formed in a manner that does not include tantalum, tungsten, or cobalt (e.g., the metal-semiconductor alloy portion 744 may comprise titanium silicide). Thus, in the third configuration, tantalum and/or cobalt may, or may not, be present within the metal-semiconductor alloy portion 744. Alternatively, the metal-semiconductor alloy portion 744 may be omitted in the third configuration.

The first metallic nitride barrier layer 1732 includes a conductive metal nitride, which can include, for example, titanium nitride or tungsten nitride. The first metallic nitride barrier layer 1732 can be deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD). The thickness of the first metallic nitride barrier layer 1732 can be in a range from 2 nm to 60 nm, such as from 5 nm to 20 nm, although lesser and greater thicknesses can also be employed.

Subsequently, the second metallic nitride barrier layer 1736 can be deposited on the first metallic nitride barrier layer 1732. The second metallic nitride barrier layer 1736 can include tantalum nitride. In one embodiment, the second metallic nitride barrier layer 1736 can consist essentially of tantalum nitride. The thickness of the second metallic nitride barrier layer 1736 can be in a range from 5 nm to 60 nm, such as from 10 nm to 30 nm, although lesser and greater thicknesses can also be employed. The at least one metallic material layer 1730 can include a stack of the first metallic nitride barrier layer 1732 and the second metallic nitride barrier layer 1736 in this case. Diffusion of boron atoms can be stopped in a layer including cobalt, tungsten, and/or tantalum because they are not conducive to formation of cobalt-boron compounds or tantalum-boron compounds. The layer at which diffusion of boron is stopped may be the metal-semiconductor alloy portion 744 and/or the second metallic nitride barrier layer 1736.

Alternatively, the positions of the first metallic nitride barrier layer 1732 and the second metallic nitride barrier layer 1736 may be reversed. In this case, the first metallic nitride barrier layer 1732 can include tantalum nitride, and the second metallic nitride barrier layer 1736 can include a metallic nitride other than tantalum nitride.

A thin film stack including titanium, cobalt or tantalum is provided by the combination of the metal-semiconductor alloy portion 744, the first metallic nitride barrier layer 1732, and the second metallic nitride barrier layer 1736. Non-limiting exemplary thin film stacks in the third configuration include TaSi₂/TiN/TaN, TaSi₂/WN/TaN, CoSi₂/TiN/TaN, CoSi₂/WN/TaN, TaSi₂/TaN/TiN, TaSi₂/TaN/WN, CoSi₂/TaN/TiN, CoSi₂/TaN/WN, a metal silicide not including Ta or Co/TiN/TaN, a metal silicide not including Ta or Co/WN/TaN, a metal silicide not including Ta or Co/TaN/TiN, and a metal silicide not including Ta or Co/TaN/WN. Examples of metal silicides not including Ta or Co include titanium silicide, tungsten silicide, and nickel silicide. In one embodiment, the thin film stack can include TiSi₂/TiN/TaN.

Referring to FIG. 3C, a fourth configuration for the device contact via structure 782 is shown. The at least one metallic material layer 1730 of a device contact via structure 782 can include a stack of an additional metallic nitride barrier layer (which is herein referred to as a first metallic nitride barrier layer 1732) that is deposited directly on the metal semiconductor alloy portion 744, an elemental metal layer 1734, and a metallic nitride barrier layer 1736 (which is herein referred to as a second metallic nitride barrier layer 1736) that is deposited on the first metallic nitride barrier layer 1732. In this case, tantalum, tungsten, and/or cobalt can be provided within the elemental metal layer 1734. Even after activation anneal that is performed in subsequent processes and may cause diffusion of dopant atoms into the elemental metal layer 1734, at least one elemental metal selected from tantalum and cobalt is present within the elemental metal layer 1734 at an atomic concentration greater than 97%, and/or greater than 99%, and/or greater than 99.8%. Optionally, additional tantalum, tungsten, and/or cobalt can be provided in the metal-semiconductor alloy portion 744 and/or in the barrier layers 1732 and/or 1736.

The metal-semiconductor alloy portion 744 may be formed in the same manner as in the first configuration of FIG. 3A to include tantalum, tungsten, and/or cobalt therein, or may be formed in a manner that does not include tantalum, tungsten, or cobalt (e.g., the metal-semiconductor alloy portion 744 may comprise titanium silicide). In the fourth configuration, tantalum, tungsten, and/or cobalt may, or may not, be present within the metal-semiconductor alloy portion 744. Alternatively, the metal-semiconductor alloy portion 744 may be omitted in the fourth configuration.

The first metallic nitride barrier layer 1732 includes a conductive metal nitride, which can include, for example, titanium nitride, tungsten nitride, or tantalum nitride. The first metallic nitride barrier layer 1732 can be deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD). The thickness of the first metallic nitride barrier layer 1732 can be in a range from 2 nm to 60 nm, such as from 5 nm to 20 nm, although lesser and greater thicknesses can also be employed.

The elemental metal layer 1734 can include, or consist essentially of, at least one elemental metal selected from cobalt, tantalum, or tungsten. The elemental metal layer 1734 can be a cobalt layer, a tantalum layer, a tungsten layer, or an alloy layer of at least two elemental metals selected from cobalt, tantalum, and tungsten. In one embodiment, the elemental metal layer 1734 can be a cobalt layer. The elemental metal layer 1734 can be deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD). The thickness of the elemental metal layer 1734 can be in a range from 2 nm to 60 nm, such as from 5 nm to 20 nm, although lesser and greater thicknesses can also be employed.

Subsequently, the second metallic nitride barrier layer 1736 can be deposited on the elemental metal layer 1734. The second metallic nitride barrier layer 1736 includes a conductive metal nitride, which can include, for example, titanium nitride, tungsten nitride, or tantalum nitride. The second metallic nitride barrier layer 1736 can be deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD). The thickness of the second metallic nitride barrier layer 1736 can be in a range from 2 nm to 60 nm, such as from 5 nm to 20 nm, although lesser and greater thicknesses can also be employed.

The at least one metallic material layer 1730 can include a stack of the first metallic nitride barrier layer 1732, the elemental metal layer 1734, and the second metallic nitride barrier layer 1736 in this case. Diffusion of boron atoms can be stopped in a layer including cobalt, tantalum, and/or tungsten because cobalt, tantalum, and tungsten are not conducive to formation of cobalt-boron compounds, tantalum-boron compounds, or tungsten-boron compounds. The layer at which diffusion of boron is stopped may be the metal-semiconductor alloy portion 744, the barrier layer(s) 1732 or 1736, and/or the elemental metal layer 1734.

A thin film stack including cobalt or tantalum is provided by the combination of the metal-semiconductor alloy portion 744, the first metallic nitride barrier layer 1732, the elemental metal layer 1734, and the second metallic nitride barrier layer 1736. Non-limiting exemplary thin film stacks in the fourth configuration include TaSi₂/TiN/Co/TiN, TaSi₂/TiN/Co/TaN, TaSi₂/WN/Co/TaN, CoSi₂/TiN/Co/TiN, CoSi₂/TiN/Co/TaN, CoSi₂/WN/Co/TaN, TaSi₂/TaN/Co/TiN, TaSi₂/TaN/Co/WN, CoSi₂/TaN/Co/TiN, CoSi₂/TaN/Co/WN, TaSi₂/TiN/Ta/TiN, TaSi₂/TiN/Ta/TaN, TaSi₂/WN/Ta/TaN, CoSi₂/TiN/Ta/TiN, CoSi₂/TiN/Ta/TaN, CoSi₂/WN/Ta/TaN, TaSi₂/TaN/Ta/TiN, TaSi₂/TaN/Ta/WN, CoSi₂/TaN/Ta/TiN, CoSi₂/TaN/Ta/WN, a metal silicide not including Ta or Co/TiN/Co/TiN, a metal silicide not including Ta or Co/TiN/Co/TaN, a metal silicide not including Ta or Co/WN/Co/TaN, a metal silicide not including Ta or Co/TaN/Co/TiN, a metal silicide not including Ta or Co/TaN/Co/WN, a metal silicide not including Ta or Co/TiN/Ta/TiN, a metal silicide not including Ta or Co/TiN/Ta/TaN, a metal silicide not including Ta or Co/WN/Ta/TaN, a metal silicide not including Ta or Co/TaN/Ta/TiN, and a metal silicide not including Ta or Co/TaN/Ta/WN. Examples of metal silicides not including Ta or Co include titanium silicide, tungsten silicide, and nickel silicide. In one embodiment, the thin film stack can include TiSi₂/TiN/Co/TiN.

According to an aspect of the present disclosure, the various device contact via structures 782 of the present disclosure include at least one metallic material layer 1730 contacting a stable metal-semiconductor alloy portion 744. The device contact via structure 782 can provide Ohmic contact to the metal-semiconductor alloy portion 744 and to the underlying semiconductor material portion (such as a transistor active region 742) while preventing or reducing outdiffusion of electrical dopants (e.g., boron) from the underlying semiconductor material portion. Specifically, the at least one metallic material layer 1730 of the present disclosure can be thermally stable and prevents outdiffusion of electrical dopants under thermal budget on the order of about 10 minutes of exposure at 1,000 degrees Celsius.

Subsequently, the additional layers within the at least one lower level dielectric layer 760 and the additional layers in the lower level metal interconnect structures 780 can be formed. A three-dimensional memory array can be formed over the at least one lower level dielectric layer 760. During formation of the three-dimensional memory array, the doped semiconductor material portions 742, the device contact via structures 782, and the three-dimensional memory array can be subjected to a thermal anneal process at a temperature that exceeds 1,000 degrees Celsius, which causes diffusion of electrical dopants (such as boron) through metallic contact via structures in prior art structures. In the exemplary structures of the present disclosure, tantalum or cobalt present within the device contact via structures 782 blocks diffusion of dopants from the doped semiconductor material of the transistor active regions 742 into the conductive fill material portion 1740 during thermal anneal process.

Referring to FIG. 5, an optional planar conductive material layer 6 and a planar semiconductor material layer 10 can be formed over the underlying peripheral device region 700. The optional planar conductive material layer 6 includes a conductive material such as a metal or a heavily doped semiconductor material. The optional planar conductive material layer 6, for example, may include a tungsten layer having a thickness in a range from 3 nm to 100 nm, although lesser and greater thicknesses can also be employed. A metal nitride layer (not shown) may be provided as a diffusion barrier layer on top of the planar conductive material layer 6. Layer 6 may function as a special source line in the completed device. Alternatively, layer 6 may comprise an etch stop layer and may comprise any suitable conductive, semiconductor or insulating layer.

The planar semiconductor material layer 10 can be formed over the at least one lower level dielectric layer 760. The planar semiconductor material layer 10 includes a semiconductor material, which can include at least one elemental semiconductor material, at least one III-V compound semiconductor material, at least one II-VI compound semiconductor material, at least one organic semiconductor material, and/or other semiconductor materials known in the art. In one embodiment, the planar semiconductor material layer 10 can include a polycrystalline semiconductor material (such as polysilicon), or an amorphous semiconductor material (such as amorphous silicon) that is converted into a polycrystalline semiconductor material in a subsequent processing step (such as an anneal step). The planar semiconductor material layer 10 can be formed directly above a subset of the semiconductor devices on the semiconductor substrate 8 (e.g., silicon wafer). As used herein, a first element is located “directly above” a second element if the first element is located above a horizontal plane including a topmost surface of the second element and an area of the first element and an area of the second element has an areal overlap in a plan view (i.e., along a vertical plane or direction perpendicular to the top surface of the substrate 9). In one embodiment, the planar semiconductor material layer 10 or portions thereof can be doped with electrical dopants, which may be p-type dopants or n-type dopants. The conductivity type of the dopants in the planar semiconductor material layer 10 is herein referred to as a first conductivity type. A dielectric pad layer 52 can be formed on the top surface of the planar semiconductor material layer 10.

An alternating stack of first material layers and second material layers is subsequently formed. Each first material layer can include a first material, and each second material layer can include a second material that is different from the first material. In case at least another alternating stack of material layers is subsequently formed over the alternating stack of the first material layers and the second material layers, the alternating stack is herein referred to as a first-tier alternating stack. The level of the first-tier alternating stack is herein referred to as a first-tier level, and the level of the alternating stack to be subsequently formed immediately above the first-tier level is herein referred to as a second-tier level, etc.

The first-tier alternating stack can include first insulting layers 132 as the first material layers, and first spacer material layers as the second material layers. In one embodiment, the first spacer material layers can be sacrificial material layers that are subsequently replaced with electrically conductive layers. In another embodiment, the first spacer material layers can be electrically conductive layers that are not subsequently replaced with other layers. While the present disclosure is described employing embodiments in which sacrificial material layers are replaced with electrically conductive layers, embodiments in which the spacer material layers are formed as electrically conductive layers (thereby obviating the need to perform replacement processes) are expressly contemplated herein.

In one embodiment, the first material layers and the second material layers can be first insulating layers 132 and first sacrificial material layers 142, respectively. In one embodiment, each first insulating layer 132 can include a first insulating material, and each first sacrificial material layer 142 can include a first sacrificial material. An alternating plurality of first insulating layers 132 and first sacrificial material layers 142 is formed over the planar semiconductor material layer 10. As used herein, a “sacrificial material” refers to a material that is removed during a subsequent processing step.

As used herein, an alternating stack of first elements and second elements refers to a structure in which instances of the first elements and instances of the second elements alternate. Each instance of the first elements that is not an end element of the alternating plurality is adjoined by two instances of the second elements on both sides, and each instance of the second elements that is not an end element of the alternating plurality is adjoined by two instances of the first elements on both ends. The first elements may have the same thickness thereamongst, or may have different thicknesses. The second elements may have the same thickness thereamongst, or may have different thicknesses. The alternating plurality of first material layers and second material layers may begin with an instance of the first material layers or with an instance of the second material layers, and may end with an instance of the first material layers or with an instance of the second material layers. In one embodiment, an instance of the first elements and an instance of the second elements may form a unit that is repeated with periodicity within the alternating plurality.

The first-tier alternating stack (132, 142) can include first insulating layers 132 composed of the first material, and first sacrificial material layers 142 composed of the second material, which is different from the first material. The first material of the first insulating layers 132 can be at least one insulating material. Insulating materials that can be employed for the first insulating layers 132 include, but are not limited to silicon oxide (including doped or undoped silicate glass), silicon nitride, silicon oxynitride, organosilicate glass (OSG), spin-on dielectric materials, dielectric metal oxides that are commonly known as high dielectric constant (high-k) dielectric oxides (e.g., aluminum oxide, hafnium oxide, etc.) and silicates thereof, dielectric metal oxynitrides and silicates thereof, and organic insulating materials. In one embodiment, the first material of the first insulating layers 132 can be silicon oxide.

The second material of the first sacrificial material layers 142 is a sacrificial material that can be removed selective to the first material of the first insulating layers 132. As used herein, a removal of a first material is “selective to” a second material if the removal process removes the first material at a rate that is at least twice the rate of removal of the second material. The ratio of the rate of removal of the first material to the rate of removal of the second material is herein referred to as a “selectivity” of the removal process for the first material with respect to the second material.

The first sacrificial material layers 142 may comprise an insulating material, a semiconductor material, or a conductive material. The second material of the first sacrificial material layers 142 can be subsequently replaced with electrically conductive electrodes which can function, for example, as control gate electrodes of a vertical NAND device. In one embodiment, the first sacrificial material layers 142 can be material layers that comprise silicon nitride.

In one embodiment, the first insulating layers 132 can include silicon oxide, and sacrificial material layers can include silicon nitride sacrificial material layers. The first material of the first insulating layers 132 can be deposited, for example, by chemical vapor deposition (CVD). For example, if silicon oxide is employed for the first insulating layers 132, tetraethylorthosilicate (TEOS) can be employed as the precursor material for the CVD process. The second material of the first sacrificial material layers 142 can be formed, for example, CVD or atomic layer deposition (ALD).

The thicknesses of the first insulating layers 132 and the first sacrificial material layers 142 can be in a range from 20 nm to 50 nm, although lesser and greater thicknesses can be employed for each first insulating layer 132 and for each first sacrificial material layer 142. The number of repetitions of the pairs of a first insulating layer 132 and a first sacrificial material layer 142 can be in a range from 2 to 1,024, and typically from 8 to 256, although a greater number of repetitions can also be employed. In one embodiment, each first sacrificial material layer 142 in the first-tier alternating stack (132, 142) can have a uniform thickness that is substantially invariant within each respective first sacrificial material layer 142.

A first insulating cap layer 170 is subsequently formed over the stack (132, 142). The first insulating cap layer 170 includes a dielectric material, which can be any dielectric material that can be employed for the first insulating layers 132. In one embodiment, the first insulating cap layer 170 includes the same dielectric material as the first insulating layers 132. The thickness of the insulating cap layer 170 can be in a range from 20 nm to 300 nm, although lesser and greater thicknesses can also be employed.

Referring to FIG. 6, the first insulating cap layer 170 and the first-tier alternating stack (132, 142) can be patterned to form first stepped surfaces in the word line contact via region 200. The word line contact via region 200 can include a respective first stepped area in which the first stepped surfaces are formed, and a second stepped area in which additional stepped surfaces are to be subsequently formed in a second tier structure (to be subsequently formed over a first tier structure) and/or additional tier structures. The first stepped surfaces can be formed, for example, by forming a mask layer with an opening therein, etching a cavity within the levels of the first insulating cap layer 170, and iteratively expanding the etched area and vertically recessing the cavity by etching each pair of a first insulating layer 132 and a first sacrificial material layer 142 located directly underneath the bottom surface of the etched cavity within the etched area. A dielectric material can be deposited to fill the first stepped cavity to form a first-tier retro-stepped dielectric material portion 165. As used herein, a “retro-stepped” element refers to an element that has stepped surfaces and a horizontal cross-sectional area that increases monotonically as a function of a vertical distance from a top surface of a substrate on which the element is present. The first-tier alternating stack (132, 142) and the first-tier retro-stepped dielectric material portion 165 collectively constitute a first tier structure, which is an in-process structure that is subsequently modified.

Referring to FIGS. 7A and 7B, an inter-tier dielectric layer 180 may be optionally deposited over the first tier structure (132, 142, 165, 170). The inter-tier dielectric layer 180 includes a dielectric material such as silicon oxide. The thickness of the inter-tier dielectric layer 180 can be in a range from 30 nm to 300 nm, although lesser and greater thicknesses can also be employed. Locations of steps S in the first-tier alternating stack (132, 142) are illustrated as dotted lines.

First-tier memory openings 149 and first tier support openings 119 can be formed. The first-tier memory openings 149 and the first-tier support openings 119 extend through the first-tier alternating stack (132, 142) at least to a top surface of the planar semiconductor material layer 10. The first-tier memory openings 149 can be formed in the memory array region 100 at locations at which memory stack structures including vertical stacks of memory elements are to be subsequently formed. The first-tier support openings 119 can be formed in the word line contact via region 200. For example, a lithographic material stack (not shown) including at least a photoresist layer can be formed over the first insulating cap layer 170 (and the optional inter-tier dielectric layer 180, if present), and can be lithographically patterned to form openings within the lithographic material stack. The pattern in the lithographic material stack can be transferred through the first insulating cap layer 170 (and the optional inter-tier dielectric layer 180), and through the entirety of the first-tier alternating stack (132, 142) by at least one anisotropic etch that employs the patterned lithographic material stack as an etch mask. Portions of the first insulating cap layer 170 (and the optional inter-tier dielectric layer 180), and the first-tier alternating stack (132, 142) underlying the openings in the patterned lithographic material stack are etched to form the first-tier memory openings 149 and the first-tier support openings 119. In other words, the transfer of the pattern in the patterned lithographic material stack through the first insulating cap layer 170 and the first-tier alternating stack (132, 142) forms the first-tier memory openings 149 and the first-tier support openings 119.

In one embodiment, the chemistry of the anisotropic etch process employed to etch through the materials of the first-tier alternating stack (132, 142) can alternate to optimize etching of the first and second materials in the first-tier alternating stack (132, 142). The anisotropic etch can be, for example, a series of reactive ion etches or a single etch (e.g., CF₄/O₂/Ar etch). The sidewalls of the first-tier memory openings 149 and the support openings 119 can be substantially vertical, or can be tapered. Subsequently, the patterned lithographic material stack can be subsequently removed, for example, by ashing.

Optionally, the portions of the first-tier memory openings 149 and the first-tier support openings 119 at the level of the inter-tier dielectric layer 180 can be laterally expanded by an isotropic etch. For example, if the inter-tier dielectric layer 180 comprises a dielectric material (such as borosilicate glass) having a greater etch rate than the first insulating layers 132 (that can include undoped silicate glass), an isotropic etch (such as a wet etch employing HF) can be employed to expand the lateral dimensions of the first-tier memory openings at the level of the inter-tier dielectric layer 180. The portions of the first-tier memory openings 149 (and the first-tier support openings 119) located at the level of the inter-tier dielectric layer 180 may be optionally widened to provide a larger landing pad for second-tier memory openings to be subsequently formed through a second-tier alternating stack (to be subsequently formed prior to formation of the second-tier memory openings).

Referring to FIG. 8, sacrificial memory opening fill portions 148 can be formed in the first-tier memory openings 149, and sacrificial support opening fill portions 118 can be formed in the first-tier support openings 119. For example, a sacrificial fill material layer is deposited in the first-tier memory openings 149 and the first-tier support openings 119. The sacrificial fill material layer includes a sacrificial material which can be subsequently removed selective to the materials of the first insulating layers 132 and the first sacrificial material layers 142. In one embodiment, the sacrificial fill material layer can include a semiconductor material such as silicon (e.g., a-Si or polysilicon), a silicon-germanium alloy, germanium, a III-V compound semiconductor material, or a combination thereof. Optionally, a thin etch stop layer (such as a silicon oxide layer having a thickness in a range from 1 nm to 3 nm) may be employed prior to depositing the sacrificial fill material layer. The sacrificial fill material layer may be formed by a non-conformal deposition or a conformal deposition method. In another embodiment, the sacrificial fill material layer can include amorphous silicon or a carbon-containing material (such as amorphous carbon or diamond-like carbon) that can be subsequently removed by ashing.

Portions of the deposited sacrificial material can be removed from above the first insulating cap layer 170 (and the optional inter-tier dielectric layer 180, if present). For example, the sacrificial fill material layer can be recessed to a top surface of the first insulating cap layer 170 (and the optional inter-tier dielectric layer 180) employing a planarization process. The planarization process can include a recess etch, chemical mechanical planarization (CMP), or a combination thereof. The top surface of the first insulating layer 170 (and optionally layer 180 if present) can be employed as an etch stop layer or a planarization stop layer. Each remaining portion of the sacrificial material in a first-tier memory opening 149 constitutes a sacrificial memory opening fill portion 148. Each remaining portion of the sacrificial material in a first-tier support opening 119 constitutes a sacrificial support opening fill portion 118. The top surfaces of the sacrificial memory opening fill portions 148 and the sacrificial support opening fill portions 118 can be coplanar with the top surface of the inter-tier dielectric layer 180 (or the first insulating cap layer 170 if the inter-tier dielectric layer 180 is not present). The sacrificial memory opening fill portion 148 and the sacrificial support opening fill portions 118 may, or may not, include cavities therein.

Referring to FIG. 9, a second tier structure can be formed over the first tier structure (132, 142, 170, 148, 118). The second tier structure can include an additional alternating stack of insulating layers and spacer material layers, which can be sacrificial material layers. For example, a second alternating stack (232, 242) of material layers can be subsequently formed on the top surface of the first alternating stack (132, 142). The second stack (232, 242) includes an alternating plurality of third material layers and fourth material layers. Each third material layer can include a third material, and each fourth material layer can include a fourth material that is different from the third material. In one embodiment, the third material can be the same as the first material of the first insulating layer 132, and the fourth material can be the same as the second material of the first sacrificial material layers 142.

In one embodiment, the third material layers can be second insulating layers 232 and the fourth material layers can be second spacer material layers that provide vertical spacing between each vertically neighboring pair of the second insulating layers 232. In one embodiment, the third material layers and the fourth material layers can be second insulating layers 232 and second sacrificial material layers 242, respectively. The third material of the second insulating layers 232 may be at least one insulating material. The fourth material of the second sacrificial material layers 242 may be a sacrificial material that can be removed selective to the third material of the second insulating layers 232. The second sacrificial material layers 242 may comprise an insulating material, a semiconductor material, or a conductive material. The fourth material of the second sacrificial material layers 242 can be subsequently replaced with electrically conductive electrodes which can function, for example, as control gate electrodes of a vertical NAND device.

In one embodiment, each second insulating layer 232 can include a second insulating material, and each second sacrificial material layer 242 can include a second sacrificial material. In this case, the second stack (232, 242) can include an alternating plurality of second insulating layers 232 and second sacrificial material layers 242. The third material of the second insulating layers 232 can be deposited, for example, by chemical vapor deposition (CVD). The fourth material of the second sacrificial material layers 242 can be formed, for example, CVD or atomic layer deposition (ALD).

The third material of the second insulating layers 232 can be at least one insulating material. Insulating materials that can be employed for the second insulating layers 232 can be any material that can be employed for the first insulating layers 132. The fourth material of the second sacrificial material layers 242 is a sacrificial material that can be removed selective to the third material of the second insulating layers 232. Sacrificial materials that can be employed for the second sacrificial material layers 242 can be any material that can be employed for the first sacrificial material layers 142. In one embodiment, the second insulating material can be the same as the first insulating material, and the second sacrificial material can be the same as the first sacrificial material.

The thicknesses of the second insulating layers 232 and the second sacrificial material layers 242 can be in a range from 20 nm to 50 nm, although lesser and greater thicknesses can be employed for each second insulating layer 232 and for each second sacrificial material layer 242. The number of repetitions of the pairs of a second insulating layer 232 and a second sacrificial material layer 242 can be in a range from 2 to 1,024, and typically from 8 to 256, although a greater number of repetitions can also be employed. In one embodiment, each second sacrificial material layer 242 in the second stack (232, 242) can have a uniform thickness that is substantially invariant within each respective second sacrificial material layer 242.

Second stepped surfaces in the second stepped area can be formed in the word line contact via region 200 employing a same set of processing steps as the processing steps employed to form the first stepped surfaces in the first stepped area with suitable adjustment to the pattern of at least one masking layer. A second-tier retro-stepped dielectric material portion 265 can be formed over the second stepped surfaces in the word line contact via region 200.

A second insulating cap layer 270 can be subsequently formed over the second alternating stack (232, 242). The second insulating cap layer 270 includes a dielectric material that is different from the material of the second sacrificial material layers 242. In one embodiment, the second insulating cap layer 270 can include silicon oxide. In one embodiment, the first and second sacrificial material layers (142, 242) can comprise silicon nitride.

Generally speaking, at least one alternating stack of insulating layers (132, 232) and spacer material layers (such as sacrificial material layers (142, 242)) can be formed over the planar semiconductor material layer 10, and at least one retro-stepped dielectric material portion (165, 265) can be formed over the staircase regions on the at least one alternating stack (132, 142, 232, 242).

Optionally, drain-select-level shallow trench isolation structures 72 can be formed through a subset of layers in an upper portion of the second-tier alternating stack (232, 242). The second sacrificial material layers 242 that are cut by the select-drain-level shallow trench isolation structures 72 correspond to the levels in which drain-select-level electrically conductive layers are subsequently formed. The drain-select-level shallow trench isolation structures 72 include a dielectric material such as silicon oxide.

Referring to FIGS. 10A and 10B, second-tier memory openings 249 and second tier support openings 219 extending through the second tier structure (232, 242, 270, 265) are formed in areas overlying the sacrificial memory opening fill portions 148. A photoresist layer can be applied over the second tier structure (232, 242, 270, 265), and can be lithographically patterned to form a same pattern as the pattern of the sacrificial memory opening fill portions 148 and the sacrificial support opening fill portions 118, i.e., the pattern of the first-tier memory openings 149 and the first-tier support openings 119. Thus, the lithographic mask employed to pattern the first-tier memory openings 149 and the first-tier support openings 119 can be employed to pattern the second-tier memory openings 249 and the second-tier support openings 219. An anisotropic etch can be performed to transfer the pattern of the lithographically patterned photoresist layer through the second tier structure (232, 242, 270, 265). In one embodiment, the chemistry of the anisotropic etch process employed to etch through the materials of the second-tier alternating stack (232, 242) can alternate to optimize etching of the alternating material layers in the second-tier alternating stack (232, 242). The anisotropic etch can be, for example, a series of reactive ion etches. The patterned lithographic material stack can be removed, for example, by ashing after the anisotropic etch process.

A top surface of an underlying sacrificial memory opening fill portion 148 can be physically exposed at the bottom of each second-tier memory opening 249. A top surface of an underlying sacrificial support opening fill portion 118 can be physically exposed at the bottom of each second-tier support opening 219. After the top surfaces of the sacrificial memory opening fill portions 148 and the sacrificial support opening fill portions 118 are physically exposed, an etch process can be performed, which removes the sacrificial material of the sacrificial memory opening fill portions 148 and the sacrificial support opening fill portions 118 selective to the materials of the second-tier alternating stack (232, 242) and the first-tier alternating stack (132, 142) (e.g., C₄F₈/O₂/Ar etch).

Upon removal of the sacrificial memory opening fill portions 148, each vertically adjoining pair of a second-tier memory opening 249 and a first-tier memory opening 149 forms a continuous cavity that extends through the first-tier alternating stack (132, 142) and the second-tier alternating stack (232, 242). Likewise, upon removal of the sacrificial support opening fill portions 118, each vertically adjoining pair of a second-tier support opening 219 and a first-tier support opening 119 forms a continuous cavity that extends through the first-tier alternating stack (132, 142) and the second-tier alternating stack (232, 242). The continuous cavities are herein referred to as memory openings (or inter-tier memory openings) and support openings (or inter-tier support openings), respectively. A top surface of the planar semiconductor material layer 10 can be physically exposed at the bottom of each memory opening and at the bottom of each support openings. Locations of steps S in the first-tier alternating stack (132, 142) and the second-tier alternating stack (232, 242) are illustrated as dotted lines.

Referring to FIG. 11, memory opening fill structures 58 are formed within each memory opening, and support pillar structures 20 are formed within each support opening. The memory opening fill structures 58 and the support pillar structures 20 can include a same set of components, and can be formed simultaneously.

FIGS. 12A-12H provide sequential cross-sectional views of a memory opening 49 or a support opening (119, 219) during formation of a memory opening fill structure 58 or a support pillar structure 20. While a structural change in a memory opening 49 is illustrated in FIGS. 12A-12H, it is understood that the same structural change occurs in each memory openings 49 and in each of the support openings (119, 219) during the same set of processing steps.

Referring to FIG. 12A, a memory opening 49 in the exemplary device structure of FIG. 11 is illustrated. The memory opening 49 extends through the first tier structure and the second tier structure. Likewise, each support opening (119, 219) extends through the first tier structure and the second tier structure.

Referring to FIG. 12B, an optional pedestal channel portion (e.g., an epitaxial pedestal) 11 can be formed at the bottom portion of each memory opening 49 and each support openings (119, 219), for example, by a selective semiconductor deposition process. In one embodiment, the pedestal channel portion 11 can be doped with electrical dopants of the same conductivity type as the planar semiconductor material layer 10. In one embodiment, at least one source select gate electrode can be subsequently formed by replacing each sacrificial material layer 42 located below the horizontal plane including the top surfaces of the pedestal channel portions 11 with a respective conductive material layer. A cavity 49′ is present in the unfilled portion of the memory opening 49 (or of the support opening) above the pedestal channel portion 11. In one embodiment, the pedestal channel portion 11 can comprise single crystalline silicon. In one embodiment, the pedestal channel portion 11 can have a doping of the same as the conductivity type of the planar semiconductor material layer 10.

Referring to FIG. 12C, a stack of layers including a blocking dielectric layer 52, a charge storage layer 54, a tunneling dielectric layer 56, and an optional first semiconductor channel layer 601 can be sequentially deposited in the memory openings 49.

The blocking dielectric layer 52 can include a single dielectric material layer or a stack of a plurality of dielectric material layers. In one embodiment, the blocking dielectric layer can include a dielectric metal oxide layer consisting essentially of a dielectric metal oxide. As used herein, a dielectric metal oxide refers to a dielectric material that includes at least one metallic element and at least oxygen. The dielectric metal oxide may consist essentially of the at least one metallic element and oxygen, or may consist essentially of the at least one metallic element, oxygen, and at least one non-metallic element such as nitrogen. In one embodiment, the blocking dielectric layer 52 can include a dielectric metal oxide having a dielectric constant greater than 7.9, i.e., having a dielectric constant greater than the dielectric constant of silicon nitride.

Non-limiting examples of dielectric metal oxides include aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), lanthanum oxide (LaO₂), yttrium oxide (Y₂O₃), tantalum oxide (Ta₂Os), silicates thereof, nitrogen-doped compounds thereof, alloys thereof, and stacks thereof. The dielectric metal oxide layer can be deposited, for example, by chemical vapor deposition (CVD), atomic layer deposition (ALD), pulsed laser deposition (PLD), liquid source misted chemical deposition, or a combination thereof. The thickness of the dielectric metal oxide layer can be in a range from 1 nm to 20 nm, although lesser and greater thicknesses can also be employed. The dielectric metal oxide layer can subsequently function as a dielectric material portion that blocks leakage of stored electrical charges to control gate electrodes. In one embodiment, the blocking dielectric layer 52 includes aluminum oxide. In one embodiment, the blocking dielectric layer 52 can include multiple dielectric metal oxide layers having different material compositions.

Alternatively or additionally, the blocking dielectric layer 52 can include a dielectric semiconductor compound such as silicon oxide, silicon oxynitride, silicon nitride, or a combination thereof. In one embodiment, the blocking dielectric layer 52 can include silicon oxide. In this case, the dielectric semiconductor compound of the blocking dielectric layer 52 can be formed by a conformal deposition method such as low pressure chemical vapor deposition, atomic layer deposition, or a combination thereof. The thickness of the dielectric semiconductor compound can be in a range from 1 nm to 20 nm, although lesser and greater thicknesses can also be employed. Alternatively, the blocking dielectric layer 52 can be omitted, and a backside blocking dielectric layer can be formed after formation of backside recesses on surfaces of memory films to be subsequently formed.

Subsequently, the charge storage layer 54 can be formed. In one embodiment, the charge storage layer 54 can be a continuous layer or patterned discrete portions of a charge trapping material including a dielectric charge trapping material, which can be, for example, silicon nitride. Alternatively, the charge storage layer 54 can include a continuous layer or patterned discrete portions of a conductive material such as doped polysilicon or a metallic material that is patterned into multiple electrically isolated portions (e.g., floating gates), for example, by being formed within lateral recesses into sacrificial material layers (142, 242). In one embodiment, the charge storage layer 54 includes a silicon nitride layer. In one embodiment, the sacrificial material layers (142, 242) and the insulating layers (132, 232) can have vertically coincident sidewalls, and the charge storage layer 54 can be formed as a single continuous layer.

In another embodiment, the sacrificial material layers (142, 242) can be laterally recessed with respect to the sidewalls of the insulating layers (132, 232), and a combination of a deposition process and an anisotropic etch process can be employed to form the charge storage layer 54 as a plurality of memory material portions that are vertically spaced apart. While the present disclosure is described employing an embodiment in which the charge storage layer 54 is a single continuous layer, embodiments are expressly contemplated herein in which the charge storage layer 54 is replaced with a plurality of memory material portions (which can be charge trapping material portions or electrically isolated conductive material portions) that are vertically spaced apart.

The charge storage layer 54 can be formed as a single charge storage layer of homogeneous composition, or can include a stack of multiple charge storage layers. The multiple charge storage layers, if employed, can comprise a plurality of spaced-apart floating gate material layers that contain conductive materials (e.g., metal such as tungsten, molybdenum, tantalum, titanium, platinum, ruthenium, and alloys thereof, or a metal silicide such as tungsten silicide, molybdenum silicide, tantalum silicide, titanium silicide, nickel silicide, cobalt silicide, or a combination thereof) and/or semiconductor materials (e.g., polycrystalline or amorphous semiconductor material including at least one elemental semiconductor element or at least one compound semiconductor material). Alternatively or additionally, the charge storage layer 54 may comprise an insulating charge trapping material, such as one or more silicon nitride segments. Alternatively, the charge storage layer 54 may comprise conductive nanoparticles such as metal nanoparticles, which can be, for example, ruthenium nanoparticles. The charge storage layer 54 can be formed, for example, by chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), or any suitable deposition technique for storing electrical charges therein. The thickness of the charge storage layer 54 can be in a range from 2 nm to 20 nm, although lesser and greater thicknesses can also be employed.

The tunneling dielectric layer 56 includes a dielectric material through which charge tunneling can be performed under suitable electrical bias conditions. The charge tunneling may be performed through hot-carrier injection or by Fowler-Nordheim tunneling induced charge transfer depending on the mode of operation of the monolithic three-dimensional NAND string memory device to be formed. The tunneling dielectric layer 56 can include silicon oxide, silicon nitride, silicon oxynitride, dielectric metal oxides (such as aluminum oxide and hafnium oxide), dielectric metal oxynitride, dielectric metal silicates, alloys thereof, and/or combinations thereof. In one embodiment, the tunneling dielectric layer 56 can include a stack of a first silicon oxide layer, a silicon oxynitride layer, and a second silicon oxide layer, which is commonly known as an ONO stack. In one embodiment, the tunneling dielectric layer 56 can include a silicon oxide layer that is substantially free of carbon or a silicon oxynitride layer that is substantially free of carbon. The thickness of the tunneling dielectric layer 56 can be in a range from 2 nm to 20 nm, although lesser and greater thicknesses can also be employed.

The optional first semiconductor channel layer 601 includes a semiconductor material such as at least one elemental semiconductor material, at least one III-V compound semiconductor material, at least one II-VI compound semiconductor material, at least one organic semiconductor material, or other semiconductor materials known in the art. In one embodiment, the first semiconductor channel layer 601 includes amorphous silicon or polysilicon. The first semiconductor channel layer 601 can be formed by a conformal deposition method such as low pressure chemical vapor deposition (LPCVD). The thickness of the first semiconductor channel layer 601 can be in a range from 2 nm to 10 nm, although lesser and greater thicknesses can also be employed. A cavity 49′ is formed in the volume of each memory opening 49 that is not filled with the deposited material layers (52, 54, 56, 601).

Referring to FIG. 12D, the optional first semiconductor channel layer 601, the tunneling dielectric layer 56, the charge storage layer 54, the blocking dielectric layer 52 are sequentially anisotropically etched employing at least one anisotropic etch process. The portions of the first semiconductor channel layer 601, the tunneling dielectric layer 56, the charge storage layer 54, and the blocking dielectric layer 52 located above the top surface of the second insulating cap layer 270 can be removed by the at least one anisotropic etch process. Further, the horizontal portions of the first semiconductor channel layer 601, the tunneling dielectric layer 56, the charge storage layer 54, and the blocking dielectric layer 52 at a bottom of each cavity 49′ can be removed to form openings in remaining portions thereof. Each of the first semiconductor channel layer 601, the tunneling dielectric layer 56, the charge storage layer 54, and the blocking dielectric layer 52 can be etched by a respective anisotropic etch process employing a respective etch chemistry, which may, or may not, be the same for the various material layers.

Each remaining portion of the first semiconductor channel layer 601 can have a tubular configuration. The charge storage layer 54 can comprise a charge trapping material or a floating gate material. In one embodiment, each charge storage layer 54 can include a vertical stack of charge storage regions that store electrical charges upon programming. In one embodiment, the charge storage layer 54 can be a charge storage layer in which each portion adjacent to the sacrificial material layers (142, 242) constitutes a charge storage region.

A surface of the pedestal channel portion 11 (or a surface of the planar semiconductor material layer 10 in case the pedestal channel portions 11 are not employed) can be physically exposed underneath the opening through the first semiconductor channel layer 601, the tunneling dielectric layer 56, the charge storage layer 54, and the blocking dielectric layer 52. Optionally, the physically exposed semiconductor surface at the bottom of each cavity 49′ can be vertically recessed so that the recessed semiconductor surface underneath the cavity 49′ is vertically offset from the topmost surface of the pedestal channel portion 11 (or of the planar semiconductor material layer 10 in case pedestal channel portions 11 are not employed) by a recess distance. A tunneling dielectric layer 56 is located over the charge storage layer 54. A set of a blocking dielectric layer 52, a charge storage layer 54, and a tunneling dielectric layer 56 in a memory opening 49 constitutes a memory film 50, which includes a plurality of charge storage regions (as embodied as the charge storage layer 54) that are insulated from surrounding materials by the blocking dielectric layer 52 and the tunneling dielectric layer 56. In one embodiment, the first semiconductor channel layer 601, the tunneling dielectric layer 56, the charge storage layer 54, and the blocking dielectric layer 52 can have vertically coincident sidewalls.

Referring to FIG. 12E, a second semiconductor channel layer 602 can be deposited directly on the semiconductor surface of the pedestal channel portion 11 or the semiconductor substrate layer 10 if the pedestal channel portion 11 is omitted, and directly on the first semiconductor channel layer 601. The second semiconductor channel layer 602 includes a semiconductor material such as at least one elemental semiconductor material, at least one III-V compound semiconductor material, at least one II-VI compound semiconductor material, at least one organic semiconductor material, or other semiconductor materials known in the art. In one embodiment, the second semiconductor channel layer 602 includes amorphous silicon or polysilicon. The second semiconductor channel layer 602 can be formed by a conformal deposition method such as low pressure chemical vapor deposition (LPCVD). The thickness of the second semiconductor channel layer 602 can be in a range from 2 nm to 10 nm, although lesser and greater thicknesses can also be employed. The second semiconductor channel layer 602 may partially fill the cavity 49′ in each memory opening, or may fully fill the cavity in each memory opening.

The materials of the first semiconductor channel layer 601 and the second semiconductor channel layer 602 are collectively referred to as a semiconductor channel material. In other words, the semiconductor channel material is a set of all semiconductor material in the first semiconductor channel layer 601 and the second semiconductor channel layer 602.

Referring to FIG. 12F, in case the cavity 49′ in each memory opening is not completely filled by the second semiconductor channel layer 602, a dielectric core layer 62L can be deposited in the cavity 49′ to fill any remaining portion of the cavity 49′ within each memory opening. The dielectric core layer 62L includes a dielectric material such as silicon oxide or organosilicate glass. The dielectric core layer 62L can be deposited by a conformal deposition method such as low pressure chemical vapor deposition (LPCVD), or by a self-planarizing deposition process such as spin coating.

Referring to FIG. 12G, the horizontal portion of the dielectric core layer 62L can be removed, for example, by a recess etch from above the top surface of the second insulating cap layer 270. Each remaining portion of the dielectric core layer 62L constitutes a dielectric core 62. Further, the horizontal portion of the second semiconductor channel layer 602 located above the top surface of the second insulating cap layer 270 can be removed by a planarization process, which can employ a recess etch or chemical mechanical planarization (CMP). Each remaining portion of the second semiconductor channel layer 602 can be located entirety within a memory opening 49 or entirely within a support opening (119, 219).

Each adjoining pair of a first semiconductor channel layer 601 and a second semiconductor channel layer 602 can collectively form a vertical semiconductor channel 60 through which electrical current can flow when a vertical NAND device including the vertical semiconductor channel 60 is turned on. A tunneling dielectric layer 56 is surrounded by a charge storage layer 54, and laterally surrounds a portion of the vertical semiconductor channel 60. Each adjoining set of a blocking dielectric layer 52, a charge storage layer 54, and a tunneling dielectric layer 56 collectively constitute a memory film 50, which can store electrical charges with a macroscopic retention time. In some embodiments, a blocking dielectric layer 52 may not be present in the memory film 50 at this step, and a blocking dielectric layer may be subsequently formed after formation of backside recesses. As used herein, a macroscopic retention time refers to a retention time suitable for operation of a memory device as a permanent memory device such as a retention time in excess of 24 hours.

Referring to FIG. 12H, the top surface of each dielectric core 62 can be further recessed within each memory opening, for example, by a recess etch to a depth that is located between the top surface of the second insulating cap layer 270 and the bottom surface of the second insulating cap layer 270. Drain regions 63 can be formed by depositing a doped semiconductor material within each recessed region above the dielectric cores 62. The drain regions 63 can have a doping of a second conductivity type that is the opposite of the first conductivity type. For example, if the first conductivity type is p-type, the second conductivity type is n-type, and vice versa. The dopant concentration in the drain regions 63 can be in a range from 5.0×10¹⁹/cm³ to 2.0×10²¹/cm³, although lesser and greater dopant concentrations can also be employed. The doped semiconductor material can be, for example, doped polysilicon. Excess portions of the deposited semiconductor material can be removed from above the top surface of the second insulating cap layer 270, for example, by chemical mechanical planarization (CMP) or a recess etch to form the drain regions 63.

Each combination of a memory film 50 and a vertical semiconductor channel 60 (which is a vertical semiconductor channel) within a memory opening 49 constitutes a memory stack structure 55. The memory stack structure 55 is a combination of a semiconductor channel, a tunneling dielectric layer, a plurality of memory elements as embodied as portions of the charge storage layer 54, and an optional blocking dielectric layer 52. Each combination of a pedestal channel portion 11 (if present), a memory stack structure 55, a dielectric core 62, and a drain region 63 within a memory opening 49 constitutes a memory opening fill structure 58. Each combination of a pedestal channel portion 11 (if present), a memory film 50, a vertical semiconductor channel 60, a dielectric core 62, and a drain region 63 within each support opening (119, 219) fills the respective support openings (119, 219), and constitutes a support pillar structure 20.

The first tier structure (132, 142, 170, 165), the second tier structure (232, 242, 270, 265), the inter-tier dielectric layer 180, the memory opening fill structures 58, and the support pillar structures 20 collectively constitute a memory-level assembly. The memory-level assembly is formed over the planar semiconductor material layer 10 such that the planar semiconductor material layer 10 includes horizontal semiconductor channels electrically connected to vertical semiconductor channels 60 within the memory stack structures 55.

Referring to FIGS. 13A and 13B, a first contact level dielectric layer 280 can be formed over the memory-level assembly. The first contact level dielectric layer 280 is formed at a contact level through which various contact via structures are subsequently formed to the drain regions 63 and the various electrically conductive layers that replaces the sacrificial material layers (142, 242) in subsequent processing steps.

Backside contact trenches 79 are subsequently formed through the first contact level dielectric layer 280 and the memory-level assembly. For example, a photoresist layer can be applied and lithographically patterned over the first contact level dielectric layer 280 to form elongated openings that extend along a first horizontal direction hd1. An anisotropic etch is performed to transfer the pattern in the patterned photoresist layer through the first contact level dielectric layer 280 and the memory-level assembly to a top surface of the planar semiconductor material layer 10. The photoresist layer can be subsequently removed, for example, by ashing.

The backside contact trenches 79 extend along the first horizontal direction hd1, and thus, are elongated along the first horizontal direction hd1. The backside contact trenches 79 can be laterally spaced among one another along a second horizontal direction hd2, which can be perpendicular to the first horizontal direction hd1. The backside contact trenches 79 can extend through the memory array region 100 and the word line contact via region 200. The first subset of the backside contact trenches 79 laterally divides the memory-level assembly.

Referring to FIG. 14, an etchant that selectively etches the materials of the first and second sacrificial material layers (142, 242) with respect to the materials of the first and second insulating layers (132, 232), the first and second insulating cap layers (170, 270), and the material of the outermost layer of the memory films 50 can be introduced into the backside contact trenches 79, for example, employing an isotropic etch process. First backside recesses are formed in volumes from which the first sacrificial material layers 142 are removed. Second backside recesses are formed in volumes from which the second sacrificial material layers 242 are removed. In one embodiment, the first and second sacrificial material layers (142, 242) can include silicon nitride, and the materials of the first and second insulating layers (132, 232), can be silicon oxide. In another embodiment, the first and second sacrificial material layers (142, 242) can include a semiconductor material such as germanium or a silicon-germanium alloy, and the materials of the first and second insulating layers (132, 232) can be selected from silicon oxide and silicon nitride.

The isotropic etch process can be a wet etch process employing a wet etch solution, or can be a gas phase (dry) etch process in which the etchant is introduced in a vapor phase into the backside contact trench 79. For example, if the first and second sacrificial material layers (142, 242) include silicon nitride, the etch process can be a wet etch process in which the exemplary structure is immersed within a wet etch tank including phosphoric acid, which etches silicon nitride selective to silicon oxide, silicon, and various other materials employed in the art. In case the sacrificial material layers (142, 242) comprise a semiconductor material, a wet etch process (which may employ a wet etchant such as a KOH solution) or a dry etch process (which may include gas phase HCl) may be employed.

Each of the first and second backside recesses can be a laterally extending cavity having a lateral dimension that is greater than the vertical extent of the cavity. In other words, the lateral dimension of each of the first and second backside recesses can be greater than the height of the respective backside recess. A plurality of first backside recesses can be formed in the volumes from which the material of the first sacrificial material layers 142 is removed. A plurality of second backside recesses can be formed in the volumes from which the material of the second sacrificial material layers 242 is removed. Each of the first and second backside recesses can extend substantially parallel to the top surface of the substrate 9. A backside recess can be vertically bounded by a top surface of an underlying insulating layer (132 or 232) and a bottom surface of an overlying insulating layer (132 or 232). In one embodiment, each of the first and second backside recesses can have a uniform height throughout.

In one embodiment, a sidewall surface of each pedestal channel portion 11 can be physically exposed at each bottommost first backside recess after removal of the first and second sacrificial material layers (142, 242). Further, a top surface of the planar semiconductor material layer 10 can be physically exposed at the bottom of each backside contact trench 79. An annular dielectric spacer (not shown) can be formed around each pedestal channel portion 11 by oxidation of a physically exposed peripheral portion of the pedestal channel portions 11. Further, a semiconductor oxide portion (not shown) can be formed from each physically exposed surface portion of the planar semiconductor material layer 10 concurrently with formation of the annular dielectric spacers.

A backside blocking dielectric layer (not shown) can be optionally deposited in the backside recesses and the backside contact trenches 79 and over the first contact level dielectric layer 280. The backside blocking dielectric layer can be deposited on the physically exposed portions of the outer surfaces of the memory stack structures 55. The backside blocking dielectric layer includes a dielectric material such as a dielectric metal oxide, silicon oxide, or a combination thereof. If employed, the backside blocking dielectric layer can be formed by a conformal deposition process such as atomic layer deposition or chemical vapor deposition. The thickness of the backside blocking dielectric layer can be in a range from 1 nm to 60 nm, although lesser and greater thicknesses can also be employed.

At least one conductive material can be deposited in the plurality of backside recesses, on the sidewalls of the backside contact trench 79, and over the first contact level dielectric layer 280. The at least one conductive material can include at least one metallic material, i.e., an electrically conductive material that includes at least one metallic element.

A plurality of first electrically conductive layers 146 can be formed in the plurality of first backside recesses, a plurality of second electrically conductive layers 246 can be formed in the plurality of second backside recesses, and a continuous metallic material layer (not shown) can be formed on the sidewalls of each backside contact trench 79 and over the first contact level dielectric layer 280. Thus, the first and second sacrificial material layers (142, 242) can be replaced with the first and second conductive material layers (146, 246), respectively. Specifically, each first sacrificial material layer 142 can be replaced with an optional portion of the backside blocking dielectric layer and a first electrically conductive layer 146, and each second sacrificial material layer 242 can be replaced with an optional portion of the backside blocking dielectric layer and a second electrically conductive layer 246. A backside cavity is present in the portion of each backside contact trench 79 that is not filled with the continuous metallic material layer.

The metallic material can be deposited by a conformal deposition method, which can be, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD), electroless plating, electroplating, or a combination thereof. The metallic material can be an elemental metal, an intermetallic alloy of at least two elemental metals, a conductive nitride of at least one elemental metal, a conductive metal oxide, a conductive doped semiconductor material, a conductive metal-semiconductor alloy such as a metal silicide, alloys thereof, and combinations or stacks thereof. Non-limiting exemplary metallic materials that can be deposited in the backside recesses include tungsten, tungsten nitride, titanium, titanium nitride, tantalum, tantalum nitride, cobalt, and ruthenium. In one embodiment, the metallic material can comprise a metal such as tungsten and/or metal nitride. In one embodiment, the metallic material for filling the backside recesses can be a combination of titanium nitride layer and a tungsten fill material. In one embodiment, the metallic material can be deposited by chemical vapor deposition or atomic layer deposition.

Residual conductive material can be removed from inside the backside contact trenches 79. Specifically, the deposited metallic material of the continuous metallic material layer can be etched back from the sidewalls of each backside contact trench 79 and from above the first contact level dielectric layer 280, for example, by an anisotropic or isotropic etch. Each remaining portion of the deposited metallic material in the first backside recesses constitutes a first electrically conductive layer 146. Each remaining portion of the deposited metallic material in the second backside recesses constitutes a second electrically conductive layer 246. Each electrically conductive layer (146, 246) can be a conductive line structure.

A subset of the second electrically conductive layers 246 located at the levels of the drain-select-level shallow trench isolation structures 72 constitutes drain select gate electrodes. A subset of the first electrically conductive layers 146 located at each level of the annular dielectric spacers (not shown) constitutes source select gate electrodes. A subset of the electrically conductive layer (146, 246) located between the drain select gate electrodes and the source select gate electrodes can function as combinations of a control gate and a word line located at the same level. The control gate electrodes within each electrically conductive layer (146, 246) are the control gate electrodes for a vertical memory device including the memory stack structure 55.

Each of the memory stack structures 55 comprises a vertical stack of memory elements located at each level of the electrically conductive layers (146, 246). A subset of the electrically conductive layers (146, 246) can comprise word lines for the memory elements. The semiconductor devices in the underlying peripheral device region 700 can comprise word line switch devices configured to control a bias voltage to respective word lines. The memory-level assembly is located over the substrate semiconductor layer 9. The memory-level assembly includes at least one alternating stack (132, 146, 232, 246) and memory stack structures 55 vertically extending through the at least one alternating stack (132, 146, 232, 246). Each of the at least one an alternating stack (132, 146, 232, 246) includes alternating layers of respective insulating layers (132 or 232) and respective electrically conductive layers (146 or 246). The at least one alternating stack (132, 146, 232, 246) comprises staircase regions that include terraces in which each underlying electrically conductive layer (146, 246) extends farther along the first horizontal direction hd1 than any overlying electrically conductive layer (146, 246) in the memory-level assembly.

Dopants of a second conductivity type, which is the opposite of the first conductivity type of the planar semiconductor material layer 10, can be implanted into a surface portion of the planar semiconductor material layer 10 to form a source region 61 underneath the bottom surface of each backside contact trench 79. An insulating spacer 74 including a dielectric material can be formed at the periphery of each backside contact trench 79, for example, by deposition of a conformal insulating material (such as silicon oxide) and a subsequent anisotropic etch. The first contact level dielectric layer 280 may be thinned due to a collateral etch during the anisotropic etch that removes the vertical portions of horizontal portions of the deposited conformal insulating material.

A conformal insulating material layer can be deposited in the backside contact trenches 79, and can be anisotropically etched to form insulating spacers 74. The insulating spacers 74 include an insulating material such as silicon oxide, silicon nitride, and/or a dielectric metal oxide. A cavity laterally extending along the first horizontal direction hd1 is present within each insulating spacer 74.

A backside contact via structure can be formed in the remaining volume of each backside contact trench 79, for example, by deposition of at least one conductive material and removal of excess portions of the deposited at least one conductive material from above a horizontal plane including the top surface of the first contact level dielectric layer 280 by a planarization process such as chemical mechanical planarization or a recess etch. The backside contact via structures are electrically insulated in all lateral directions, and is laterally elongated along the first horizontal direction hd1. As such, the backside contact via structures are herein referred to as laterally-elongated contact via structures 76. As used herein, a structure is “laterally elongated” if the maximum lateral dimension of the structure along a first horizontal direction is greater than the maximum lateral dimension of the structure along a second horizontal direction that is perpendicular to the first horizontal direction at least by a factor of 5.

Optionally, each laterally-elongated contact via structure 76 may include multiple backside contact via portions such as a lower backside contact via portion and an upper backside contact via portion. In an illustrative example, the lower backside contact via portion can include a doped semiconductor material (such as doped polysilicon), and can be formed by depositing the doped semiconductor material layer to fill the backside contact trenches 79 and removing the deposited doped semiconductor material from upper portions of the backside contact trenches 79. The upper backside contact via portion can include at least one metallic material (such as a combination of a TiN liner and a W fill material), and can be formed by depositing the at least one metallic material above the lower backside contact via portions, and removing an excess portion of the at least one metallic material from above the horizontal plane including the top surface of the first contact level dielectric layer 280. The first contact level dielectric layer 280 can be thinned and removed during a latter part of the planarization process, which may employ chemical mechanical planarization (CMP), a recess etch, or a combination thereof. Each laterally-elongated contact via structure 76 can be formed through the memory-level assembly and on a respective source region 61. The top surface of each laterally-elongated contact via structure 76 can located above a horizontal plane including the top surfaces of the memory stack structures 55.

A second contact level dielectric layer 282 can be optionally formed over the first contact level dielectric layer 280. The second contact level dielectric layer 282 includes a dielectric material such as silicon oxide or silicon nitride. The thickness of the second contact level dielectric layer 282 can be in a range from 30 nm to 300 nm, although lesser and greater thicknesses can also be employed.

Drain contact via structures 88 contacting the drain regions 63 can extend through the contact level dielectric layers (280, 282) and the second insulating cap layer 270 in the memory array region 100. A source connection via structure 91 can extend through the contact level dielectric layers (280, 282) to provide electrical connection to the laterally-elongated contact via structures 76.

Referring to FIGS. 15A and 15B, various contact via structures can be formed through the contact level dielectric layers (280, 282) and the retro-stepped dielectric material portions (165, 265). For example, word line contact via structures 86 can be formed in the word line contact region 200. A subset of the word line contact via structures 86 contacting the second electrically conductive layers 246 extends through the second-tier retro-stepped dielectric material portion 265 in the word line contact region 200, and does not extend through the first-tier retro-stepped dielectric material portion 165. Another subset of the word line contact via structures 86 contacting the first electrically conductive layers 146 extends through the second-tier retro-stepped dielectric material portion 265 and through the first-tier retro-stepped dielectric material portion 165 in the word line contact region 200.

Further, through-memory-level via cavities can be formed through the memory-level assembly outside the areas of the memory array region 100 and the word line contact region 200. In this case, the through-memory-level via cavities can be formed through the contact level dielectric layers (280, 282) and the retro-stepped dielectric material portions (165, 265), and into the at least one lower level dielectric layer 760. A top surface of a respective one of the lower level metal interconnect structures 780 can be physically exposed at the bottom of each through-memory-level via cavities. The through-memory-level openings can be formed, for example, by applying a photoresist layer (not shown) over the first contact level dielectric layer 280, lithographically patterning the photoresist layer to form openings, and transferring the pattern in the photoresist layer through the contact level dielectric layers (280, 282) and the retro-stepped dielectric material portions (165, 265), and into the at least one lower level dielectric layer 760 by an anisotropic etch. The photoresist layer can be removed, for example, by ashing. At least one conductive material can be deposited in the through-memory-level via cavities to form through-memory-level via structures 488. The through-memory-level via structures 488 can provide vertical electrical connection through the memory level structures.

Referring to FIG. 16, a line level dielectric layer 284 can be formed over the contact level dielectric layers (280, 282). Various line level metal interconnect structures (96, 98) can be formed in the line level dielectric layer 284. The line level metal interconnect structures (96, 98) can include upper level metal interconnect structures 96 that are electrically coupled to (e.g., formed on or in physical contact with) respective pairs of a word line contact via structure 86 and a through-memory-level via structure 488, and bit lines 98 that extend along the second horizontal direction hd2 and perpendicular to the first horizontal direction hd1. Additional line level metal interconnect structures that are not expressly illustrated can include source connection line structures that contact the source connection via structures 91 to provide electrically conductive paths for biasing the source regions 61 through the laterally-elongated contact via structures 76, and drain side select gate electrode contact via structures are located in the word line contact regions 200. The through-memory-level via structures 488 can be conductive structures that provide electrically conductive paths between the device contact via structure 782 and metal lines (such as the upper level metal interconnect structures 96) that are located above a horizontal plane including a top surface of the three-dimensional memory array.

The various configurations of the exemplary structure of the present disclosure provide a three-dimensional memory device which comprises driver transistors 710 containing boron doped semiconductor active regions 742 and device contact via structures 782 in physical contact with the boron doped semiconductor active regions 742. The device contact via structures 782 comprise at least one of tantalum and cobalt. A three-dimensional memory array is located over the driver transistors 710 and includes an alternating stack of insulating layers (132, 232) and electrically conductive layers (146, 246), and memory structures 55 vertically extending through the alternating stack.

In one embodiment, each device contact via structure 782 comprises from bottom to top, a metal-semiconductor alloy portion 744, a metallic nitride barrier layer 1736 and a conductive fill material portion 1740. The at least one of tantalum or cobalt is present in at least one of the metal-semiconductor alloy portion 744, the metallic nitride barrier layer 1736, or between the metal-semiconductor alloy portion 744 and the metallic nitride barrier layer 1736.

In one embodiment, the at least one of tantalum or cobalt is present in the metal-semiconductor alloy portion 744 which comprises tantalum silicide, cobalt silicide or tantalum cobalt silicide.

In another embodiment, an elemental metal layer 1734 including cobalt, tantalum, and/or tungsten is located between the metal-semiconductor alloy portion 744 and the metallic nitride barrier layer 1736. In this embodiment, at least one of including cobalt, tantalum, and tungsten is present as a single elemental metal portion or an intermetallic alloy portion between the metal-semiconductor alloy portion and the metallic nitride barrier layer. In this embodiment, the metallic nitride barrier layer 1736 comprises a material selected from tantalum nitride, titanium nitride, and tungsten nitride.

In another embodiment, tantalum is present in the metallic nitride barrier layer 1736 which comprises tantalum nitride. In this embodiment, the metal-semiconductor alloy portion 744 comprises a material selected from one of titanium silicide, cobalt silicide and tantalum silicide. In various embodiments, an additional titanium nitride barrier layer 1732 may also be provided.

A set of conductive structures (780, 488) including the device conductive via structure 782 provides an electrically conductive path between the doped semiconductor material regions 742 and a metal line (such as an upper level metal interconnect structure 96) located above a horizontal plane including a top surface of the three-dimensional memory array.

Each memory structure 55 (e.g., memory stack structure 55) comprises a memory film 50 and a vertical semiconductor channel 60. The electrically conductive layers (146, 246) comprise word lines of the three-dimensional memory array. The set of conductive structures (780, 488) and the metal line 96 provide an electrically conductive path between the boron doped semiconductor active regions 742 of the driver transistors 710 and the word lines (146, 246) of the three-dimensional memory array.

The exemplary structure can include a three-dimensional memory structure. The memory structures 55 can comprise memory elements of a vertical NAND device. The electrically conductive layers (146, 246) can comprise, or can be electrically connected to, a respective word line of the vertical NAND device. The substrate 8 can comprises a silicon substrate. The vertical NAND device can comprise an array of monolithic three-dimensional NAND strings over the silicon substrate. At least one memory cell in a first device level of the array of monolithic three-dimensional NAND strings is located over another memory cell in a second device level of the array of monolithic three-dimensional NAND strings. The silicon substrate can contain an integrated circuit comprising the word line driver circuit and a bit line driver circuit for the memory device. The array of monolithic three-dimensional NAND strings can comprise a plurality of semiconductor channels, wherein at least one end portion (such as a vertical semiconductor channel 60) of each of the plurality of semiconductor channels (59, 11, 60) extends substantially perpendicular to a top surface of the semiconductor substrate 8, a plurality of charge storage elements (as embodied as portions of the memory material layer 54 located at each word line level), each charge storage element located adjacent to a respective one of the plurality of semiconductor channels (59, 11, 60), and a plurality of control gate electrodes (as embodied as a subset of the electrically conductive layers (146, 246) having a strip shape extending substantially parallel to the top surface of the substrate 8 (e.g., along the first horizontal direction hd1), the plurality of control gate electrodes comprise at least a first control gate electrode located in the first device level and a second control gate electrode located in the second device level.

The activation anneal of the implanted source and/or drain regions (e.g., 61, 63 and/or 142) of various devices includes a high temperature, such as a temperature in excess of 1,000 degrees Celsius, which is sufficient to cause diffusion of electrical dopants (and particularly boron atoms) within the transistor active regions 142. The various methods and structures of the present disclosure prevent or reduce outdiffusion of the electrical dopants, such as boron from the doped semiconductor material of the transistor active regions 742 into contact via structures, and thus, prevents or reduces the degradation of electrical characteristics of the driver transistors 710 of the three dimensional memory devices.

Although the foregoing refers to particular embodiments, it will be understood that the disclosure is not so limited. It will occur to those of ordinary skill in the art that various modifications may be made to the disclosed embodiments and that such modifications are intended to be within the scope of the disclosure. Compatibility is presumed among all embodiments that are not alternatives of one another. The word “comprise” or “include” contemplates all embodiments in which the word “consist essentially of” or the word “consists of” replaces the word “comprise” or “include,” unless explicitly stated otherwise. Where an embodiment employing a particular structure and/or configuration is illustrated in the present disclosure, it is understood that the present disclosure may be practiced with any other compatible structures and/or configurations that are functionally equivalent provided that such substitutions are not explicitly forbidden or otherwise known to be impossible to one of ordinary skill in the art. All of the publications, patent applications and patents cited herein are incorporated herein by reference in their entirety. 

1. A three-dimensional memory device, comprising: driver transistors containing boron doped semiconductor active regions; device contact via structures in physical contact with the boron doped semiconductor active regions, the device contact via structures containing at least one of tantalum, titanium, tungsten, and cobalt; and a three-dimensional memory array located over the driver transistors and comprising an alternating stack of insulating layers and electrically conductive layers and memory structures vertically extending through the alternating stack, wherein: each device contact via structure comprises from bottom to top, a metal-semiconductor alloy portion, a metallic nitride barrier layer and a conductive fill material portion; and the at least one of tantalum, titanium, tungsten, and cobalt is present in at least one of the metal-semiconductor alloy portion, the metallic nitride barrier layer, or between the metal-semiconductor alloy portion and the metallic nitride barrier layer.
 2. (canceled)
 3. The three-dimensional memory device of claim 1, wherein: the at least one of tantalum, titanium, tungsten, and cobalt is present in the metal-semiconductor alloy portion; and the metal-semiconductor alloy portion comprises tantalum silicide, cobalt silicide, tungsten silicide, or tantalum cobalt silicide.
 4. The three-dimensional memory device of claim 1, further comprising an elemental metal layer including cobalt, tantalum, and/or tungsten and located between the metal-semiconductor alloy portion and the metallic nitride barrier layer, wherein at least one of cobalt, tantalum, and tungsten is present between the metal-semiconductor alloy portion and the metallic nitride barrier layer.
 5. The three-dimensional memory device of claim 1, wherein the metallic nitride barrier layer comprises a material selected from tantalum nitride, titanium nitride, and tungsten nitride.
 6. The three-dimensional memory device of claim 1, wherein tantalum is present in the metallic nitride barrier layer and the metallic nitride barrier layer comprises tantalum nitride.
 7. The three-dimensional memory device of claim 6, wherein the metal-semiconductor alloy portion comprises a material selected from one of titanium silicide, cobalt silicide and tantalum silicide.
 8. The three-dimensional memory device of claim 6, further comprising an additional titanium nitride barrier layer.
 9. The three-dimensional memory device of claim 1, further comprising a set of conductive structures which includes the device conductive via structure, which provides an electrically conductive path between the boron doped semiconductor active regions and a metal line located above a horizontal plane including a top surface of the three-dimensional memory array.
 10. The three-dimensional memory device of claim 9, wherein each of the memory structures comprises a memory film and a vertical semiconductor channel, and wherein the electrically conductive layers comprise word lines of the three-dimensional memory array.
 11. The three-dimensional memory device of claim 10, wherein the set of conductive structures and the metal line provide an electrically conductive path between the boron doped semiconductor active regions of the driver transistors and the word lines of the three-dimensional memory array.
 12. The three-dimensional memory device of claim 1, wherein: the three-dimensional memory array comprises a monolithic three-dimensional NAND memory device; the electrically conductive layers comprise, or are electrically connected to, a respective word line of the monolithic three-dimensional NAND memory device; a substrate comprises a silicon substrate; the monolithic three-dimensional NAND memory device comprises an array of monolithic three-dimensional NAND strings over the silicon substrate; at least one memory cell in a first device level of the array of monolithic three-dimensional NAND strings is located over another memory cell in a second device level of the array of monolithic three-dimensional NAND strings; the silicon substrate contains an integrated circuit comprising a driver circuit for the memory device located thereon; the electrically conductive layers comprise a plurality of control gate electrodes having a strip shape extending substantially parallel to the top surface of the substrate, the plurality of control gate electrodes comprise at least a first control gate electrode located in the first device level and a second control gate electrode located in the second device level; and the array of monolithic three-dimensional NAND strings comprises: a plurality of semiconductor channels, wherein at least one end portion of each of the plurality of semiconductor channels extends substantially perpendicular to a top surface of the substrate, and a plurality of charge storage elements, each charge storage element located adjacent to a respective one of the plurality of semiconductor channels.
 13. A method of forming a three-dimensional memory device, comprising: forming driver transistors containing boron doped semiconductor active regions; forming device contact via structures in physical contact with the boron doped semiconductor active regions, the device contact via structures containing at least one of cobalt, tantalum, and tungsten; and forming a three-dimensional memory array located over the driver transistors and comprising an alternating stack of insulating layers and electrically conductive layers and memory structures vertically extending through the alternating stack, wherein the method comprises at least one feature selected from: a first feature that the method further comprises subjecting the three-dimensional memory device to a dopant activation anneal process, wherein the at least one of cobalt, tantalum, and tungsten present within the device contact via structure blocks diffusion of boron out of the boron doped semiconductor active regions during the dopant activation anneal process; and a second feature that each device contact via structure comprises from bottom to top, a metal-semiconductor alloy portion, a metallic nitride barrier layer and a conductive fill material portion, and the at least one of cobalt, tantalum, and tungsten is present in at least one of the metal-semiconductor alloy portion, the metallic nitride barrier layer, or between the metal-semiconductor alloy portion and the metallic nitride barrier layer.
 14. The method of claim 13, wherein the method comprises the first feature.
 15. The method of claim 13, wherein the method comprises the second feature.
 16. The method of claim 15, wherein: the boron doped semiconductor active regions comprise boron doped silicon transistor source or drain regions; the at least one of tantalum or cobalt is present in the metal-semiconductor alloy portion; and the metal-semiconductor alloy portion comprises tantalum silicide, tungsten silicide, cobalt silicide, or tantalum cobalt silicide formed by reacting a tantalum layer, a cobalt layer, a tungsten layer, or a tantalum cobalt alloy layer with boron doped silicon of the transistor source or drain regions.
 17. The method of claim 15, further comprising forming an elemental metal layer including at least one of cobalt, tantalum, and tungsten between the metal-semiconductor alloy portion and the metallic nitride barrier layer, wherein the at least one of cobalt, tantalum, and tungsten is present between the metal-semiconductor alloy portion and the metallic nitride barrier layer.
 18. The method of claim 15, wherein tantalum is present in the metallic nitride barrier layer, and the metallic nitride barrier layer comprises tantalum nitride.
 19. The method of claim 13, further comprising forming set of conductive structures which includes the device conductive via structure, and forming a metal line located above a horizontal plane including a top surface of the three-dimensional memory array.
 20. The method of claim 19, wherein: the set of conductive structures provides an electrically conductive path between the boron doped semiconductor active regions and the metal line; each of the memory structures comprises a memory film and a vertical semiconductor channel; the electrically conductive layers comprise word lines of the three-dimensional memory array; and the set of conductive structures and the metal line provide an electrically conductive path between the boron doped semiconductor active regions of the driver transistors and the word lines of the three-dimensional memory array.
 21. The method of claim 13, wherein: the three-dimensional memory array comprises a monolithic three-dimensional NAND memory device; the electrically conductive layers comprise, or are electrically connected to, a respective word line of the monolithic three-dimensional NAND memory device; a substrate comprises a silicon substrate; the monolithic three-dimensional NAND memory device comprises an array of monolithic three-dimensional NAND strings over the silicon substrate; at least one memory cell in a first device level of the array of monolithic three-dimensional NAND strings is located over another memory cell in a second device level of the array of monolithic three-dimensional NAND strings; the silicon substrate contains an integrated circuit comprising a driver circuit for the memory device located thereon; the electrically conductive layers comprise a plurality of control gate electrodes having a strip shape extending substantially parallel to the top surface of the substrate, the plurality of control gate electrodes comprise at least a first control gate electrode located in the first device level and a second control gate electrode located in the second device level; and the array of monolithic three-dimensional NAND strings comprises: a plurality of semiconductor channels, wherein at least one end portion of each of the plurality of semiconductor channels extends substantially perpendicular to a top surface of the substrate, and a plurality of charge storage elements, each charge storage element located adjacent to a respective one of the plurality of semiconductor channels. 